Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation

Kagiyama, Tomohiro; Saito, Yoshihiro; Otobe, K.; Nakajima, Shigeru

doi:10.1016/s0169-4332(03)00504-x

Cited by 6 publications

(6 citation statements)

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“…Although the III-V community has strived to avoid any oxidation of the surfaces, promising thermal-oxidation results for III-V's have been reported, as mentioned in the introduction. [37][38][39][40][41][42][43][44][45][300][301][302] The resulting surface oxides have demonstrated an amorphous or disordered nature, as expected, but also a clear indication of interfacial crystallization has been measured for the thermal oxidation of InAs in non-UHV conditions. 45 Moreover, an interesting combination (O2 flow in ozone cleaner + (NH4)2S + ALD) has been recently used in processing of high-quality III-V MOSFET.…”

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 74%

“…35,36 Although the III-V community has learned to avoid any oxidation of the surfaces, largely through exploiting epitaxial III-V insulating layers, the opposite approach -intentional oxidation of III-V materials -has been investigated with surprisingly promising results. [37][38][39][40][41][42][43][44][45] The resulting surface oxides have an amorphous or disordered nature, as expected, but also a clear indication of local interfacial crystallization has been measured for the thermal oxidation of InAs in non-UHV conditions. 45 Furthermore, in studies of the initial (or monolayer) oxidation of reconstructed III-V surfaces such as GaN, InAs and InGaAs, an ordered oxide structures were reported by several groups.…”

Section: Introductionmentioning

confidence: 83%

“…Surely, there are many more examples for the current III-V applications such as bonded III-V chips on Si wafers, 252 high-efficiency solar cells, 253 and metal-semiconductor FET 254,255 of which further development includes the target to decrease the surface-induced defect levels. Among the various III-V devices, the MOSFET provides the most stringent test for the surface passivation method under research and development to reduce the Dit to low 10 10 cm -2 eV -1 .…”

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

“…AlInP and AlGaAs). [38][39][40][41][42][43][44]301,302 Indeed this is a very promising method to develop both the III-V transistors and optoelectronics because it enables a selective oxidation of III-V layers via a strong oxidation tendency of aluminum, as compared to the other III-V elements. This subsection can be closed by citing Hollinger et al 37 once again: "Our results show, in This is the author's peer reviewed, accepted manuscript.…”

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

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Passivation of III–V surfaces with crystalline oxidation

Laukkanen

Punkkinen

Kuzmin

et al. 2021

Applied Physics Reviews

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The control of interfacial physicochemical properties associated with device materials to minimize the impact of point defects on device performance has been a dominant theme in the semiconductor industry.The control of the density of such defects for silicon has been well established for metal oxidesemiconductor field-effect device applications through deliberate reactions with chemically congruent species, such as hydrogen. In contrast, the control of interfacial defects for technologically important III-V device materials is still an active area of research. Performance criteria for the III-V devices are demanding in terms of energy efficiency, material consumption, sensitivity, and speed. The surface reactions of III-V crystals, including the oxidation, are typically known to result in performance limitation for devices, causing significant degradation due to high defect-level densities at the surfaces/interfaces, in contrast to high quality bulk crystal regions. Here, we discuss the approach of utilizing atomically thin, ordered oxide interfacial layers of III-V compound semiconductors, since they provide a unique opportunity for metal-oxide semiconductor applications, compared to the more common approach to avoid the surface oxidation. The long-range ordered oxide interfaces have been obtained by

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Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 74%

Section: Introductionmentioning

confidence: 83%

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

Section: Please Cite This Article As Doi: 101063/15126629mentioning

confidence: 99%

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Passivation of III–V surfaces with crystalline oxidation

Laukkanen

Punkkinen

Kuzmin

et al. 2021

Applied Physics Reviews

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“…The planar structure is believed to be more suitable for high-yield and low-cost manufacture as compared to MESFETs with recessed gates [7]. The p − buffer helps to reduce the peak electric field between the gate and drain [8], while the body contact is necessary to eliminate parasitic bipolar [9] and floating-body effects [10].…”

Section: Introductionmentioning

confidence: 99%

28V planar GaAs MESFETs for wireless base-station power amplifiers

Yang¹,

Haldar

Ye³

et al. 2005

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.

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This paper reports DC and RF characteristics of a high-voltage planar GaAs MESFET. Its breakdown voltages are over 65V at off state (V gs = -1.5V) and 30V at on state (V gs = 0.5V). Under 28V drain bias and 1.9GHz input, the power density reaches 1.0 W/mm with greater than 14dB linear gain. The third-order intermodulation product is −34dBc with 1dB back off from 1dB gain compression. These results suggest that the planar GaAs MESFET may be used as high-power and high-linearity RF power amplifiers in wireless base stations. The planar structure also makes it highly suitable for low-cost mass production.

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Au(111) Surface Contamination in Ambient Conditions: Unravelling the Dynamics of the Work Function in Air

Turetta

Sedona

Liscio

et al. 2021

Adv Materials Inter

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present on the surface of inorganic materials, such as metals, [3] silicon dioxide, [4] or indium tin oxide (ITO). [5] This airborne contamination is known to form a layer that changes the wettability of these surfaces rendering them hydrophobic upon air exposure. [1,6] Gold is widely employed both in applied and fundamental research (e.g., optoelectronic device fabrication, adsorption studies, and electrochemical detection) and it is also a suitable material for gravitational waves detection (Gravity Probe B, [7] UV-LED, [8] and LISA Pathfinder [9] ). The control of adventitious contamination is of critical importance for the above-cited applications, as surface cleanliness and uniformity are among the key requirements to obtain reliable and reproducible results. [10] For example, in ultrahigh vacuum (UHV) environments, sputter-cleaning via ion-gun bombardment followed by thermal annealing is used to remove organic contaminants to yield clean metallic surfaces. [11] Alternatively, thin films of pure gold can also be produced in situ via thermal evaporation, [6c,12] sputtering deposition [13] or e-beam evaporation, [13a] in high vacuum (HV). If gold surfaces are processed at ambient pressure (e.g., used as a substrate for the deposition of thin films or for the adsorption of biomolecules, monolayer films, or nanoparticles) cleaning and/or pretreatment protocols are often necessary, even for freshly evaporated metals. [12] Different combinations of dry treatments (e.g., flame annealing, [14] plasma cleaning, [15] ultraviolet/ozone (UV/O 3 ), [16] and mechanical polishing [17] ) and wet treatments (e.g., rinsing and/or ultrasonication in a cleaning solvent and (electro) chemical treatments [17,18] ) are commonly employed during the early stages of sample preparation prior to further processing. Residual contamination or structural changes induced by the treatment might influence, for instance, the electrochemical response of gold, still without completely preventing its functionality. [18b] In other cases, instead, as in surface force or molecular adsorption studies done via scanning probe microscopy (SPM), [10a] a very smooth and clean surface is required. The AdC contamination usually represents the uppermost layer and its presence heavily affects the measurement of surfacesensitive physical properties; for example, Gomez-Herrero and co-workers [19] showed via Kelvin probe force microscopy (KPFM) that carbon contamination can locally change the work function (WF) of a highly oriented pyrolytic graphite (HOPG) sample (freshly cleaved in ambient air and transferred inside a

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Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation

Cited by 6 publications

References 2 publications

Passivation of III–V surfaces with crystalline oxidation

Passivation of III–V surfaces with crystalline oxidation

28V planar GaAs MESFETs for wireless base-station power amplifiers

Au(111) Surface Contamination in Ambient Conditions: Unravelling the Dynamics of the Work Function in Air

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