Improvement of endurance to hot carrier degradation by hydrogen blocking P-SiO

Yoshida, Shouhei; Okuyama, Kunito; Kanai, F; Kawate, Yoshio; Motoyoshi, M.; Katto, H.

doi:10.1109/iedm.1988.32740

Cited by 12 publications

(2 citation statements)

References 3 publications

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“…Although the electron-electron scattering might result in some carriers with such high energy, the probability is small, by a corresponding Boltzmann distribution factor. Second, it has been demonstrated that the blocking of hydrogen and water from entering the MOSFETs is effective in relieving hot carrier degradation [49], indicating the possible role of the H atom and hydroxyl (-OH) in defect creation.…”

Section: The Si-h Bond Breaking Mechanisms In Different Systemsmentioning

confidence: 99%

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

et al. 2021

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Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete Si/SiO 2 interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a "Si-H•••H-O" complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H•••H-O complex will be the center for defect creation and device degradation. We also explain why such a center might be relatively easy to form during the hydrogen annealing process.

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Section: The Si-h Bond Breaking Mechanisms In Different Systemsmentioning

confidence: 99%

Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory

et al. 2021

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show abstract

“…However, hydrogen in ULSI devices often degrades its performance and reliability. Especially, hydrogen in the plasma deposited silicon nitride ( p-SiN) film for passivation causes hot carrier degradation [1,2], negative bias temperature instability (NBTI) [3], threshold-voltage instability [4] and so on, because this film contains a large amount of hydrogen atoms and ions, and they can easily diffuse into the gate oxides. In order to suppress the hydrogen diffusion from the p-SiN film, the successful insertion of a plasma deposited silicon oxynitride ( p-SiO x N y H z ) film under the p-SiN has been applied.…”

Section: Introductionmentioning

confidence: 99%