Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation

Labrot, M.; Cheynis, Fabien; Barge, D.; Juhel, M.; Müller, Pierre

doi:10.1149/07508.0029ecst

Cited by 6 publications

(2 citation statements)

References 10 publications

(18 reference statements)

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“…It might for instance be that the creation of Si adsorption sites through Si2H6(g) + H  SiH3 + SiH4(g) reactions took some times to reach a steady state when moderate amounts of B atoms, which catalyzed growth, were present on the surface. B concentration peaks at the interface between SiGe:B and Si were evidenced a few years ago by Labrot et al (17). Si:B growth kinetics and doping:…”

Section: Resultsmentioning

confidence: 88%

Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics

2020

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Si:B or Ge:B layers can used to fabricate devices such as p-type metal oxide semiconductor transistors, photo-detectors, light emitting diodes and so on. We have explored here the in-situ boron-doping of Si and Ge with Si2H6 + B2H6 and Ge2H6 + B2H6. Such chemistries enable Si or Ge epitaxy at temperatures definitely lower than with mainstream precursors such as SiH4 or GeH4. Growth temperatures and pressures in our 200mm Reduced Pressure - Chemical Vapor Deposition tool were 550°C, 20 Torr (Si) and 350°C, 100 Torr (Ge). X-ray Diffraction was used to convert the tensile strain in Si:B or Ge:B layers into substitutional B concentrations, while Secondary Ions Mass Spectrometry gave us the atomic B concentration. As far as Si:B was concerned, a huge growth rate increase (from 9.5 up to 39.8 nm min.-1) was evidenced when adding relatively small amounts of B2H6 to Si2H6. Ultra-high substitutional and atomic boron contents were obtained in those Si:B layers (at most: 2.7x1020 and 1.1x1021 atoms cm-3). For higher B2H6 flows, films became poly-crystalline. A similar growth rate increase (from 5.8 up to 20.8 nm min.-1) and really high substitutional B concentrations (at most: 4.8x1020 atoms cm-3) were otherwise obtained for Ge:B. Such concentrations were several times higher than with conventional chemistries.

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Section: Resultsmentioning

confidence: 88%

Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics

2020

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“…The B peak at the interface between SiGe:B and Si was not a SIMS artifact. It was instead an excess of boron atoms which can be suppressed thanks to the incorporation of moderate amounts of C (1%, typically) in the SiGe:B layer [25]. The impact of temperature on the 20 Torr etch rate of Si, SiGe and SiGe:B is shown in figure 13 Arrhenius plot of the etch rate as a function of 1000 T −1 (in K −1 ).…”

Section: Sige/si Samples Grown Then Etched and Metrology Usedmentioning

confidence: 99%

HCl + GeH₄ etching for the low temperature cyclic deposition/etch of Si, Si:P, tensile-Si:P and SiGe(:B)

Hartmann¹,

Veillerot²

2019

Semicond. Sci. Technol.

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We have investigated a few years ago the cyclic deposition/etch of Si(:P) in the Sources/Drains regions of MOS transistors. Blanket growth occurred at 550 °C while materials on dielectrics were selectively etched at 600 °C with GeH 4 -catalyzed HCl. Thanks to the presence of Ge atoms close to the surface, Si etching was indeed much faster with HCl+GeH 4 than with HCl. Performing those etches at 550 °C instead of 600 °C would be advantageous, as the thermal budget would be lower (3D integration), the throughput higher and amorphous Si(:P) etching easier. We have therefore quantified the impact of temperature, pressure and flows on the HCl+GeH 4 etch rate of monocrystalline Si, (doped or tensile) Si:P ([P]=10 20 or 1.5×10 21 cm −3 ) and Si 0.7 Ge 0.3 (:B) ([B]∼2×10 20 cm −3 ) for channel and raised sources and drains applications. Increasing the etch pressure and reducing the H 2 flow resulted in linear increases of the Si Etch Rate (ER). Decreasing at 650 °C the HCl flow yielded (i) definitely higher Si ER at 20 Torr and (ii) explosively higher Si ER at 90 Torr. We have then quantified, with those reduced flows, the impact of temperature on etch rate. 90 Torr etch rates were always higher than those at 20 Torr. We had at 20 Torr exponential etch rate decreases as the temperature decreased, with SiGe:B ER higher than SiGe ER, which were much higher than Si ER. The former was due to surfaces richer in Ge (and B) atoms, which acted as catalysts for H and/or Cl desorption. We otherwise had Si:P ER which were higher than Si ER, which were themselves higher than t-Si:P ER. Going over to 90 Torr yielded reasonable SiGe(:B) (Si, Si:P and t-Si:P) ER at temperatures as low as 500 °C (550 °C).

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Boron atomic-scale mapping in advanced microelectronics by atom probe tomography

et al. 2017

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Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation

Abstract: International audienc

Cited by 6 publications

References 10 publications

Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics

Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics

HCl + GeH₄ etching for the low temperature cyclic deposition/etch of Si, Si:P, tensile-Si:P and SiGe(:B)

Boron atomic-scale mapping in advanced microelectronics by atom probe tomography

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Improvement of Boron Doping in SiGe Raised Sources and Drains for FD-SOI Technology by Carbon Incorporation

Abstract: International audienc

Cited by 6 publications

References 10 publications

Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics

Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics

HCl + GeH4 etching for the low temperature cyclic deposition/etch of Si, Si:P, tensile-Si:P and SiGe(:B)

Boron atomic-scale mapping in advanced microelectronics by atom probe tomography

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HCl + GeH₄ etching for the low temperature cyclic deposition/etch of Si, Si:P, tensile-Si:P and SiGe(:B)