Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrO<sub>x</sub>/HfZrO Gate Insulator by 2 Step Sequential Ar/O<sub>2</sub> Treatment

Hasan, Mehedi; Mohit,; Islam, Md Mobaidul; Bukke, Ravindra Naik; Tokumitsu, Eisuke; Chu, Hye-Yong; Kim, Sung Chul; Jang, Jin

doi:10.1109/led.2022.3162325

Cited by 14 publications

(9 citation statements)

References 26 publications

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“…Prior to spray-coating, a four-cycle Ar/O 2 plasma treatment and a UV/O 3 treatment at 100 °C for 300 s were applied to the glass substrate with SiO 2 surface to reduce interface states and achieve a hydrophilic surface. [50,51] During the spray-coating, the substrate was heated to 275 °C using a heating substrate holder. The distance between the substrate and spray nozzle was ≈12 cm, and the nozzle moved at a speed of 7 cm −1 s. The spray time per cycle was 80 s for the entire substrate, and the In 2 Se 3 film was continuously deposited for ten cycles at a rate of ≈0.3 mL min −1 for this work.…”

Section: Methodsmentioning

confidence: 99%

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Lim,

Lee,

Kim

et al. 2023

Advanced Materials

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In2Se3, 2D ferroelectric‐semiconductor, is a promising candidate for next‐generation memory device because of its outstanding electrical properties. However, the large‐area manufacturing of In2Se3 is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large‐area In2Se3 thin film. A polycrystalline γ‐In2Se3 layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In2Se3 ferroelectric‐semiconductor field effect transistor (FeS‐FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS‐FET exhibits an electron field effect mobility of 0.97 cm2 V−1 s−1 and an on/off current ratio of >107 in the transfer curves. The memory behavior of the large‐area, In2Se3 FeS‐FETs for next‐generation memory is demonstrated.

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Section: Methodsmentioning

confidence: 99%

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Lim,

Lee,

Kim

et al. 2023

Advanced Materials

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“…Recently, various attempts have been made to exploit OxTFTs as a ferroelectric or charge trap memory device [ 7 , 8 ]. Ferroelectric oxide thin-film transistors (FeOxTFTs), which use ferroelectrics as a gate insulator, facilitate programing and erasing operations at relatively low voltages compared to charge trap transistors [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)

Park

Kwon

et al. 2023

Materials

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We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). Generally, conventional oxide thin-film transistors (OxTFTs) with dielectric gate insulators exhibit a small negative shift under negative gate bias stress (NBS) and a large positive shift under positive gate bias stress (PBS) in transfer characteristic curves. In contrast, the FeOxTFTs show a small positive shift and a large negative shift under NBS and PBS, respectively. It was confirmed that sufficient changes in the electrical characteristics are obtained by 10 min NBS and PBS. The changed electrical characteristics such as threshold voltage shift, memory on- and memory off-current were maintained for more than 168 h after NBS and 24 h after PBS. It is deduced that, since the dipole alignment of the ferroelectric layer is maximized during GBS, these changes in electrical properties are caused by the remnant dipole moments still being retained during the gate sweep. The memory on- and memory off-current are controlled by GBS and the best on/off current ratio at 107 was obtained after NBS. By repeatedly alternating NBS and PBS, the electrical characteristics were reversibly changed. Our results provide the scientific and technological basis for the development of stability and performance optimization of FeOxTFTs.

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“…[ 28 ] However, there is a trade‐off in that the temperature of the post‐metallization annealing for inducing the ferroelectric orthorhombic phase is increased. Other approaches have been reported to improve device performance by surface treatment such as microwave annealing [ 29,30 ] and plasma treatment, [ 31,32 ] and to improve ferroelectricity by generating defects, [ 33,34 ], i.e., oxygen vacancy, using sputtering and ion bombardment. In particular, oxygen vacancy in HZO film plays an important role in favoring the formation of a ferroelectric orthorhombic phase during the annealing process.…”

Section: Introductionmentioning

confidence: 99%

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

Kim,

Kuk,

Kim

et al. 2023

Adv Elect Materials

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The study demonstrates HfZrOx (HZO)‐based Si ferroelectric field‐effect transistors (FeFETs) with a low operating voltage (1.5 V) and immediate read‐after‐write operation (100 ns) via HZO thickness scaling, electron‐beam‐irradiation (EBI) treatment, and interfacial layer (IL) scavenging. With these three strategies, reduced operating voltage, immediate read‐after‐write capability, and improved endurance (>108 cycles) and retention (extrapolated 10‐year) characteristics are achieved in FeFETs. The improved characteristics of FeFETs are attributed to the reduced operating voltage by HZO thickness scaling, the ferroelectric orthorhombic phase‐oriented crystallization by EBI treatment, and the reduced gate voltage drop across the IL and reduced depolarization field by the IL scavenging. It is believed that this work contributes to the development of low‐power and fast‐read FeFETs.

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Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrO_x/HfZrO Gate Insulator by 2 Step Sequential Ar/O₂ Treatment

Cited by 14 publications

References 26 publications

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

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Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrOx/HfZrO Gate Insulator by 2 Step Sequential Ar/O2 Treatment

Cited by 14 publications

References 26 publications

Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)

Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics

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Improvement of Amorphous InGaZnO Thin-Film Transistor With Ferroelectric ZrO_x/HfZrO Gate Insulator by 2 Step Sequential Ar/O₂ Treatment

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory