Large‐Area Growth of Ferroelectric 2D γ‐In2Se3 Semiconductor by Spray Pyrolysis for Next‐Generation Memory
Taebin Lim,
Jae Heon Lee,
Donggyu Kim
et al.
Abstract:In2Se3, 2D ferroelectric‐semiconductor, is a promising candidate for next‐generation memory device because of its outstanding electrical properties. However, the large‐area manufacturing of In2Se3 is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large‐area In2Se3 thin film. A polycrystalline γ‐In2Se3 layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In2Se3 ferroelectric‐semiconductor field effect transistor (FeS‐FET) on glass… Show more
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