Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory

Abstract

In2Se3, 2D ferroelectric‐semiconductor, is a promising candidate for next‐generation memory device because of its outstanding electrical properties. However, the large‐area manufacturing of In2Se3 is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large‐area In2Se3 thin film. A polycrystalline γ‐In2Se3 layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In2Se3 ferroelectric‐semiconductor field effect transistor (FeS‐FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS‐FET exhibits an electron field effect mobility of 0.97 cm2 V−1 s−1 and an on/off current ratio of >107 in the transfer curves. The memory behavior of the large‐area, In2Se3 FeS‐FETs for next‐generation memory is demonstrated.