With the rapid development of very large-scale integration (VLSI) and flat panel display (FPD), the demands for sputtering target materials with high purity are greatly increased [1] . High purity Cu is one of the most commonly used metals for sputtering target [2] .Generally, the sputtering rate, deposited film quality and thickness uniformity are high when using a target with fine grains and small grain size difference [3] . Therefore,