Improvement in the Performance of Tin Oxide Thin-Film Transistors by Alumina Doping

Huh, Myung Soo; Yang, Bong Seop; Oh, Seung June; Lee, Joohwi; Yoon, Kwang Sub; Jeong, Jae Kyeong; Hwang, Cheol Seong; Kim, Hyeong Joon

doi:10.1149/1.3194251

Cited by 23 publications

(15 citation statements)

References 19 publications

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“…Chu et al reported that reduced carrier concentration in the n-type channel material induces higher V th and lower I off , because the channel with lower carrier concentration is more easily depleted [18]. Therefore, these positive shifts of V th and decreased I off are attributable to reductions in electron density in the TFT channels as Al levels increase [2,6,18,19]. In general, oxygen vacancies in SnO x -based materials generate free electrons, which is accompanied by n-type semiconduction [20,21].…”

Section: Resultsmentioning

confidence: 99%

Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

et al. 2019

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The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.

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Section: Resultsmentioning

confidence: 99%

Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

et al. 2019

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“…1. The first possible mechanism is the grain-boundary charge-trapping model [14][15][16], which accounts for the modulation or reduction of the polycrystalline semiconductor films' conductivity. In this model, the grain boundary acts as a trapping site for the free carrier in each grain, creating a depletion layer near the grain boundary, and effectively reduces the carrier concentration in polycrystalline thin films.…”

Section: Experiments and Discussionmentioning

confidence: 99%

Effects of the active layers deposition temperature on the electrical performance of p-type SnO thin-film Transistors

Myeonghun

Kwon

Cho

et al. 2014

Journal of the Korean Physical Society

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We investigated the effects of the active layers deposition temperature on the electrical performance of p-type tin-oxide thin-film transistors (TFTs). Negligible currents flowed between the source and the drain electrodes in the devices with tin-oxide thin films deposited at 60 • C and 220 • C, but devices with tin-oxide thin films deposited at 100, 140, and 180 • C exhibited typical p-type characteristics. For deposition temperatures ranging from 100 to 180 • C, the field-effect mobility decreased and the turn-on voltage moved in the negative direction as the deposition temperature was increased, which was mainly attributed to a decrease in the grain size based on the grainboundary charge-trapping mechanism. Our experimental results show that it is very important to optimize the active layers deposition temperature to improve the electrical performance in p-type tin-oxide TFTs.

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“…These problems can be resolved by doping with suitable cations acting as carrier repressors and crystallization stoppers because tin oxide is a bipolar OS, in which both n‐ or p‐type carrier doping are possible in the same SnO x material. To date, several doping elements have been reported to improve the performance of tin‐oxide‐based TFTs, such as aluminum, zirconium, hafnium, and fluorine . Furthermore, lower valence cations, such as nitrogen (N), indium, and antimony (Sb), have been suggested to be good p‐type dopants in SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

Effects of Oxygen Ratio on the Properties of Tin Oxide Thin Films Doped with Bismuth

Bang

Seo

Bae

et al. 2019

Physica Status Solidi (a)

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This study examins the effects of the oxygen ratio on the properties of bismuth (Bi)‐doped tin oxide (Bi‐SnOx) films deposited by radio frequency magnetron sputtering using a SnO (90 at%)‐Bi (10 at%) ceramic target. The properties of the samples are characterized by X‐ray photoelectron spectroscopy (XPS), Hall effect measurements, dynamic‐secondary ion mass spectrometry (D‐SIMS), and X‐ray diffraction (XRD). The samples deposited without oxygen gas exhibit Sn4+ and Sn2+ XPS peak areas of 44.7 and 41.1%, respectively. The Sn4+ area increases to 64.1% with increasing oxygen ratio up to 20% with a concomitant decrease of the Sn2+ area to 26%, indicating that SnO2 with n‐type conductivity is the dominant phase under a higher oxygen partial pressure. XPS shows that with increasing oxygen ratio, the chemical state of Bi changes from metallic Bi (Bi0) to Bi3+. Furthermore, with increasing oxygen ratio, the Bi content in the samples increases because of the increase in Bi2O3 formation, which causes a decrease in the number of oxygen vacancies in the samples. These results suggest that the oxygen ratio is useful for controlling Bi doping in SnOx films. Therefore, Bi doping is valuable for suppressing the formation of oxygen vacancies and improving the properties of SnOx films.

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Improvement in the Performance of Tin Oxide Thin-Film Transistors by Alumina Doping

Cited by 23 publications

References 19 publications

Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

Effects of the active layers deposition temperature on the electrical performance of p-type SnO thin-film Transistors

Effects of Oxygen Ratio on the Properties of Tin Oxide Thin Films Doped with Bismuth

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