Improvement in reliability and power consumption based on Ge10Sb90 films through erbium doping

Zou, Hua; Hu, Yifeng; Zhu, Xiaoqin; Sun, Yuemei; Zheng, Long; Sui, Yongxing; Wu, Shichen; Zhang, Song

doi:10.1007/s10853-017-0762-x

Cited by 16 publications

(5 citation statements)

References 34 publications

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“…Above points imply that the internal stress change of SbSe (1 nm)/SiO (9 nm) multilayer thin lm is much smaller, which is helpful to the fatigue performance of phasechange memory. ese values of the RMS are lower than the other phase-change lms, such as Sb 2 -Te 3 [30] and Ge 10 Sb 90 [31], indicating well smooth surface for PCM devices.…”

Section: Resultsmentioning

confidence: 96%

High Reliability and Fast-Speed Phase-Change Memory Based on Sb₇₀Se₃₀/SiO₂ Multilayer Thin Films

Zhang

You

et al. 2018

Advances in Materials Science and Engineering

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Sb70Se30/SiO2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO2/Si (100) substrates. The characteristics of Sb70Se30/SiO2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy bandgap. It is observed that the crystallization temperature, 10-year data retention, and resistance of Sb70Se30/SiO2 multilayer composite thin films exhibited a higher value, suggesting that Sb70Se30/SiO2 multilayer composite thin films have superior thermal stability. The AFM measurement suggests that the SbSe (1 nm)/SiO (9 nm) multilayer thin films possess a smaller surface roughness (RMS = 0.23 nm). Besides, it was found that the phase-change time of SbSe (1 nm)/SiO (9 nm) multilayer thin films was shorter than that of GST in the process of crystallization and amorphization.

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Section: Resultsmentioning

confidence: 96%

High Reliability and Fast-Speed Phase-Change Memory Based on Sb₇₀Se₃₀/SiO₂ Multilayer Thin Films

Zhang

You

et al. 2018

Advances in Materials Science and Engineering

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“…6(a) indicates that the Sm-Sb bonds exists in the crystalline Sm doped Sb lms, which is consistent with Er doped Sb lms. 29 Thus, the formation of some Sm-Sb bonds during the crystallization process will increase the E c and enhance the thermal stability. In addition, Fig.…”

Section: Resultsmentioning

confidence: 99%

Simultaneously high thermal stability and ultra-fast phase change speed based on samarium-doped antimony thin films

Zou

Zhu

et al. 2017

RSC Adv.

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“…Apart from titanium, other elements were also doped in Sb− Te alloy including Al, 205 Sc, 140,206 Er, 207 Ag, 208 Zn, 209 V, 210 Mo, 211 and Ta. 212 After incorporation with these impurities, most of the doped Sb−Te materials show good performance in SET speed (due to growth-dominated crystallization process) and thermal stability (increased crystallization temperature via doping effect).…”

Section: New Materials Developmentsmentioning

confidence: 99%

Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics

et al. 2022

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Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and chalcogenides when there is a change in external conditions such as temperature and pressure. Along with phase transitions in these phase change materials (PCMs) come dramatic contrasts in various physical properties, which can be engineered to manipulate electrons, photons, polaritons, and phonons at the nanoscale, offering new opportunities for reconfigurable, active nanodevices. In this review, we particularly discuss phase-transition-enabled active nanotechnologies in nonvolatile electrical memory, tunable metamaterials, and metasurfaces for manipulation of both free-space photons and in-plane polaritons, and multifunctional emissivity control in the infrared (IR) spectrum. The fundamentals of PCMs are first introduced to explain the origins and principles of phase transitions. Thereafter, we discuss multiphysical nanodevices for electronic, photonic, and thermal management, attesting to the broad applications and exciting promises of PCMs. Emerging trends and valuable applications in all-optical neuromorphic devices, thermal data storage, and encryption are outlined in the end.

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Improvement in reliability and power consumption based on Ge10Sb90 films through erbium doping

Cited by 16 publications

References 34 publications

High Reliability and Fast-Speed Phase-Change Memory Based on Sb₇₀Se₃₀/SiO₂ Multilayer Thin Films

High Reliability and Fast-Speed Phase-Change Memory Based on Sb₇₀Se₃₀/SiO₂ Multilayer Thin Films

Simultaneously high thermal stability and ultra-fast phase change speed based on samarium-doped antimony thin films

Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics

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Improvement in reliability and power consumption based on Ge10Sb90 films through erbium doping

Cited by 16 publications

References 34 publications

High Reliability and Fast-Speed Phase-Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films

High Reliability and Fast-Speed Phase-Change Memory Based on Sb70Se30/SiO2 Multilayer Thin Films

Simultaneously high thermal stability and ultra-fast phase change speed based on samarium-doped antimony thin films

Enabling Active Nanotechnologies by Phase Transition: From Electronics, Photonics to Thermotics

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Product

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High Reliability and Fast-Speed Phase-Change Memory Based on Sb₇₀Se₃₀/SiO₂ Multilayer Thin Films

High Reliability and Fast-Speed Phase-Change Memory Based on Sb₇₀Se₃₀/SiO₂ Multilayer Thin Films