Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

Bacchetta, N.; Bisello, D.; Candelori, A.; Rold, M. Da; Descovich, M.; Kaminski, A.; Messineo, A.; Rizzo, Francesco; Verzellesi, Giovanni

doi:10.1016/s0168-9002(00)01207-9

Cited by 15 publications

(8 citation statements)

References 1 publication

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“…In order to optimize the design of the pixel and the guard-ring structure for high breakdown voltage, V bd , several parameters have been varied in the simulations. As criterium for V bd we used the quantity K = (dI/dV )/(I/V ) [20] with K bd = 10. The value K = 1 corresponds to an ohmic resistor, and K 1 to avalanche breakdown.…”

Section: Simulation Of the Guard Ringsmentioning

confidence: 99%

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

Schwandt

Fretwurst

Klanner

et al. 2014

IEEE Trans. Nucl. Sci.

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The high intensity and high repetition rate of the European X-ray FreeElectron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias voltage. Within the AGIPD Collaboration the X-ray-radiation damage in MOS Capacitors and Gate-Controlled Diodes fabricated by four vendors on high-ohmic n-type silicon with two crystal orientations and different technological parameters, has been studied for doses between 1 kGy and 1 GGy. The extracted values of oxide-charge and surface-current densities have been used in TCAD simulations, and the layout and technological parameters of the AGIPD pixel sensor optimized. It is found that the optimized layout for high X-ray doses is significantly different from the one for non-irradiated sensors. First sensors and test structures have been delivered in early 2013. Measurement results for X-ray doses of 0 to 10 MGy and their comparison to simulations are presented. They demonstrate that the optimization has been successful and that the sensors fulfill the required specifications.

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Section: Simulation Of the Guard Ringsmentioning

confidence: 99%

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

Schwandt

Fretwurst

Klanner

et al. 2014

IEEE Trans. Nucl. Sci.

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“…1 we show a drawing of the two different p-stop layouts and in Table I we list the values of the implant widths and the separations between the implants for the two pixel arrays. [12]- [13]. There is a large n + region between the last guard ring and the scribe line.…”

Section: Device Structuresmentioning

confidence: 99%

Characterization of prototype BTeV silicon pixel sensors before and after irradiation

Coluccia¹,

Appel²,

Chiodini³

et al.

2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310)

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“…UniTN measurements follow a breakdown measurement approach independent of the depletion voltage. They are also suitable for cases where the leakage current shows a smooth and continuous rise due to defects existing in the original wafer or introduced in the silicon lattice after irradiation [8]. Here, V bd is the maximum applied reverse bias where the adimensional function k(I, V) < k bd .…”

Section: Leakage Currentmentioning

confidence: 99%

Quality Control (QC) of FBK preproduction 3D Si sensors for ATLAS HL-LHC Upgrades

Sultan

Samy²,

Ye³

et al. 2022

J. Inst.

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The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-production batch of 3D Si sensors of 50 × 50 μm2 pixel geometry, compatible with the full-size ITKPix (RD53B) readout chip, was fabricated. Two wafers holding temporary metal were diced at IZM, Germany, and a systematic QC test campaign was carried out at the University of Trento electronics laboratory. The paper briefly describes the 3D Si sensor design for ATLAS ITk and the required QC characterization setups. It comprises electrical tests (i.e., I-V, C-V, and I-T) of non-irradiated RD53B sensors. In addition, the study of several parametric analyses, i.e., oxide charge density, oxide thickness, inter-pixel resistance, inter-pixel capacitance, etc., are reported with the aid of Process Control Monitor (PCM) structures.

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Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

Cited by 15 publications

References 1 publication

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

Characterization of prototype BTeV silicon pixel sensors before and after irradiation

Quality Control (QC) of FBK preproduction 3D Si sensors for ATLAS HL-LHC Upgrades

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