Characterization of prototype BTeV silicon pixel sensors before and after irradiation

Coluccia, M.R.; Appel, J.A.; Chiodini, G.; Christian, D.C.; Kwan, S.

doi:10.1109/nssmic.2001.1008523

Cited by 3 publications

(4 citation statements)

References 15 publications

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“…We obtained a value for the leakage current damage constant α of (4.98 ± 0.0051) × 10 -17 A/cm. This is comparable to previous measurements [12]. However, it must be noted that these various measurements were taken under a wide variety of conditions.…”

Section: A P-stop Sensor Performancesupporting

confidence: 90%

“…The measurements shown in Fig. 4 were done at 23 o C. We investigated the variation of the leakage current with the temperature in previous work and, as expected, we observed that the current decreases exponentially with temperature [12]. Up to 6 x 10 14 p/cm 2 , the sensors have a breakdown voltage higher than 500 V.…”

Section: A P-stop Sensor Performancementioning

confidence: 58%

“…More results for the p-stop SINTEF sensors can be found in our previous work [12]. We also irradiated two FPIX0-sized glued to a PC board.…”

Section: A P-stop Sensor Performancementioning

confidence: 99%

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Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

Coluccia

Appel

Chiodini

et al.

2002 IEEE Nuclear Science Symposium Conference Record

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Section: A P-stop Sensor Performancesupporting

confidence: 90%

Section: A P-stop Sensor Performancementioning

confidence: 58%

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Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

Coluccia

Appel

Chiodini

et al.

2002 IEEE Nuclear Science Symposium Conference Record

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“…Two different detectors were tested in a thermal cycle. The first one was assembled on a flex circuit [5] and had a p-stop sensor from SINTEF (Oslo, Norway) [6] mated to a FPIX1 chip by indium bumps. The second detector used solder bumps and was assembled on a printed circuit board.…”

Section: A Ait Modulesmentioning

confidence: 99%

Study of indium and solder bumps for the BTeV pixel detector

Kwan

Andresen

Appel

et al. 2003

2003 IEEE Nuclear Science Symposium. Conference Record (IEEE Cat. No.03CH37515)

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Abstract--The pixel detector proposed for the BTeV experiment at the Fermilab Tevatron will use bump-bonding technology based on either Indium or Pb/Sn solder to connect the front-end readout chips to the silicon pixel sensors. We have studied the strength of the bumps by visual inspection of the bumps bonding silicon sensor modules to dummy chips made out of glass. The studies were done before and after thermal cycles, exposed to intense irradiation, and with the assemblies glued to a graphite substrate. We have also carried out studies on effects of temperature changes on both types of bump bonds by observing the responses of single-chip pixel detectors to an Sr 90 source. We report the results from these studies and our plan to measure the effect of cryogenic temperatures on the bumps. No loss in strength and connectivity after irradiationWe have previously reported large-scale tests of the yield using both indium and Pb/Sn solder bumps [1]. The conclusion is that both seem to be viable for pixel detectors. We have also carried out studies of various effects (e.g. storage over long period, effect of heating and cooling, and radiation) on both types of bump bonds using daisy-chained parts on a small scale [2]. Overall, these tests showed little changes in the integrity of the bump connections. Nevertheless, questions still remain on the long-term reliability of the bumps due to thermal cycle effects, attachment to a substrate with a different coefficient of thermal expansion (CTE), and radiation.

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