IV and CV curves for irradiated prototype BTeV silicon pixel sensors

Abstract

We present IV and CV curves for irradiated prototype + /n/ + silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200-MeV protons up to 6 10 14 protons cm 2 .

Electrical characterization of irradiated prototype silicon pixel sensors for BTeV

“…As we reported in a previous paper [15], the changing in the breakdown voltage performance for the FPIX0-sized and FPIX1-sized sensors is likely due the fact that we can not bias properly all the cells on the bare sensors. In [15] we report the result obtained considering FPIX1-sized sensors bump bonded to a readout chip and FPIX1-sized sensors with indium bumps deposited on the n + side that were glued with conducting silver epoxy to a piece of silicon in order to mimic the presence of the readout chip.…”

“…In [15] we report the result obtained considering FPIX1-sized sensors bump bonded to a readout chip and FPIX1-sized sensors with indium bumps deposited on the n + side that were glued with conducting silver epoxy to a piece of silicon in order to mimic the presence of the readout chip. The results obtained for these sensors were very promising, in fact the breakdown voltage performances improve and are similar to the one obtained for the test-sized sensors.…”