Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser

Abstract

The high intensity and high repetition rate of the European X-ray FreeElectron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses of up to 1 GGy for 3 years of operation at high bias voltage. Within the AGIPD Collaboration the X-ray-radiation damage in MOS Capacitors and Gate-Controlled Diodes fabricated by four vendors on high-ohmic n-type silicon with two crystal orientations and different technological parameters, has been studied for doses between 1 kGy and 1 GGy. The extracted values of oxide-charge and surface-current densities have been used in TCAD simulations, and the layout and technological parameters of the AGIPD pixel sensor optimized. It is found that the optimized layout for high X-ray doses is significantly different from the one for non-irradiated sensors. First sensors and test structures have been delivered in early 2013. Measurement results for X-ray doses of 0 to 10 MGy and their comparison to simulations are presented. They demonstrate that the optimization has been successful and that the sensors fulfill the required specifications.

Analysis of Bulk and Surface Radiation Damage in n+ in p SFz Si Micro Strip Detectors for the Future High Luminosity Collider Experiments: TCAD Simulation and Measurements

“…The microscopic model parameters can be fed into the TCAD device simulation for the surface radiation damage study [9]. Nfix was order of 2×1010 cm -2 in <100>SFz Si wafer before irradiation.…”

“…The similar investigations have been observed in the development of the Adaptive Gain Integrating Pixel Detector (AGIPD) detector for the Eu X-Ray Free Electron Laser (EuXFEL) at DESY, Hamburg, Germany. Here, we were proposed the surface damage model for surface damage effects using experimental data's; two-interface trap model and x ray damage parameter for the different x-ray doses that was implemented into TCAD device simulation program [5,[9][10][11][12] (Table 1). Table 1 shows the surface damage model for the detector irradiated by 10 keV x-rays.…”

Solid State Detectors

“…All these effects make a systematic study of surface-radiation damage difficult and time consuming. However, also thanks to the methods developed for radiation-hard electronics, surface-radiation effects are sufficiently well understood and can be avoided by a proper design [6]. Nevertheless, there are many examples of improper designs and several unpleasant surprises due to surface damage.…”

“…U 1 changes by an amount of U 1 = Q sig /C f1 . (6) Close and open S 1 to S 4 in sequence at times t 1 to t 4 . A charge C s U 1 is inserted into the second amplifier at each sample.…”

Measurement of the electric-field and time dependence of the effective oxide-charge density of the Si-SiO2system

“…for tracking in particle physics or for imaging in X-ray science. The properties of the SiO 2 , in particular the charge densities in the SiO 2 and at the Si-SiO 2 interface, influence the breakdown behaviour and the charge collection properties of Si sensors [1][2][3]. Ionization by charged particles and X-rays significantly increases these charge densities.…”