Measurement of the electric-field and time dependence of the effective oxide-charge density of the Si-SiO<sub>2</sub>system

Kopsalis, I.; Klanner, R.; Schwandt, J.

doi:10.1088/1748-0221/11/02/c02017

Cited by 1 publication

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“…A circular p-MOSFET fabricated on n-doped Si with <111> crystal orientation has been irradiated by X-rays to a dose of ≈17 kGy(SiO 2 ) with increasing irradiation steps, and the time dependence of the drain-source current, I ds (t), has been measured. During the irradiations the MOSFET has been biased in strong inversion, resulting in an electric field in the SiO 2 of 500 kV/cm pointing from the Si into the SiO 2 [120]. In Ref.…”

Section: The P-mosfet Irradiated With E F Ield Pointing From the Si Imentioning

confidence: 99%

Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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PROF. DR. MICHAEL POTTHOFFii "Τὸν δὲ νοῦ καί ἐπιστήμης ἐραστὴν ἀνάγκη τὰς τῆς ἔμφρονος φύσεως αἰτίας πρώ-τας μεταδιώκειν." Πλάτωνος, Τίμαιος, Κεφ. 16 "The lover of reason and knowledge must first seek for the causes which belong to the rational order."Plato, Timaeus, Ch. 16 iii To my parents. . . iv AbstractSilicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface.In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

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Section: The P-mosfet Irradiated With E F Ield Pointing From the Si Imentioning

confidence: 99%