Improved Vertical β-Ga₂O₃ Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

A landscape of β-Ga2O3 Schottky power diodes

“…The efficiency of highly doped, single-layer termination such as the guard ring is known to be sensitive to the charge density of the p-type layer. To realize broad design window and process latitude, advanced junction termination structures make use of multiple p-NiO layers with various lengths and acceptor densities to allow for a graded decrease in effective charge density away from the device active region while forming an extended depletion region at the device periphery [61,62] . At breakdown, the p-NiO is fully depleted to balance the charge in the β-Ga 2 O 3 drift layer.…”

Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage >8 kV

“…Optimization of the heterojunction rectifier device structure is crucial to achieve both high V B and low R ON , as well as providing management of the maximum electric fields within the structure to enhance further the device voltage blocking capability [40][41][42][43][44][45]. The design variables include the thickness and doping of the layers, doping in the drift layer and the use of the NiO as a guard ring by extending it beyond the metal cathode [46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62]. In this paper, we report an investigation of the uniformity of achieving high V B and low R ON in heterojunction rectifiers, the effect of drift layer doping and the temperature dependence of the performance of NiO/Ga 2 O 3 to 600 K.…”

The origin of twins in the growth of the (100) plane of a β-Ga2O3 crystal using EFG

“…3 The performance of β-Ga 2 O 3 crystals can also be tuned by different dopants, such as Sn and Si to increase the carrier concentration in the crystal, Fe and Mg to obtain an insulating substrate, and Ti, to obtain the laser output. [4][5][6][7] These good qualities allow β-Ga 2 O 3 crystals to be used in semiconductor lasers, 8 high-temperature gas sensors, 9 deep UV detectors, 10 scintillation detectors, 11 field effect transistors, 12,13 Schottky barrier diodes, [14][15][16] and transparent conductive electrodes. 17 β-Ga 2 O 3 crystals can be grown by melt methods, such as the floating zone (FZ), [18][19][20] Czochralski (CZ), [21][22][23][24] vertical Bridgman (VB), [25][26][27] and edge-defined film-fed growth (EFG) methods.…”