Improved subthreshold characteristics of n-channel SOI transistors

Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures

“…Table 1 in the last of Section 3) in terms of moderate threshold voltage 0.54 V (defined by constant current method 0.1 lA/lm), steep sub-threshold slope (79 mV/dec and 48 mV/dec for linear and saturation regions, respectively), slight DIBL (drain-induced-barrier-lowering) effect, and low off-state current 75 pA/lm. The 'anomalous' subthreshold slope is found to improve under the high drain bias, which is due to SOI floating-body effects in line with those reported in [1,2,6,7]. In comparison, the BTS has bad, and the HG has worse transfer characteristics, while the FB device is unable to shut off at all under the drain bias 3 V. Evidently, the LBBC is the only one enabling device operation at the drain bias 3 V.…”

Low subthreshold slope in junctionless multigate transistors

“…As a result of this positive feedback the device current latches rapidly from the off to the on state and subthreshold slopes below 60 mV per decade can be observed. This effect was first described by Davis et al 1 in 1982 and has been widely documented since. Table I lists different publications describing measurement of subthreshold slope reduction using impact ionization.…”

Bipolar effects in unipolar junctionless transistors

“…This positive feedback mechanism actuates the parasitic "bipolar" effect in parallel, resulting in the sharp increase of drain current. [9][10][11][12][13][14][15][16][17][18][19] In the reverse sweep mode, i.e., In order to understand hysteresis effect in JNL devices, potential distribution, electron, and hole concentration, along a cut-line (shown in Fig. 3(a)) from…”