Bipolar effects in unipolar junctionless transistors

Parihar, Mukta Singh; Ghosh, Dipankar; Armstrong, G.A.; Yu, Ran; Razavi, Pedram; Kranti, Abhinav

doi:10.1063/1.4748909

Cited by 42 publications

(22 citation statements)

References 17 publications

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“…The approach of analysing impact ionisation is similar to that adapted by Mayer et al [28] for impact ionisation MOS (IMOS) transistor. Our previous work on JL transistors [29,30] has focussed on understanding the reasons for steep switching at drain bias of 2 V, reduction of S-swing and increased number of decades of drain current transition with applied drain bias, and occurrence of hysteresis in JL MOSFETs, and results are in good qualitative agreement with the published experimental results [17]. In this work, we propose a methodology for steep switching operation through deliberate misalignment between front and back gates.…”

Section: Resultssupporting

confidence: 73%

Transforming gate misalignment into a unique opportunity to facilitate steep switching in junctionless nanotransistors

Gupta

Kranti²

2016

Nanotechnology

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In this work, we examine the feasibility of triggering impact ionisation at sub-bandgap voltages through optimal utilisation of structural non-ideality induced electric field redistribution in the semiconductor film for an energy efficient steep switching junctionless (JL) transistor. While misalignment between front and back gates is often considered as a disadvantage due to loss of gate controllability, the work highlights its usefulness and applicability in nanoscale devices to engineer the electric field to enhance the product of current density (J) and electric field (E) and activate impact ionisation at sub-bandgap applied voltages. Results show that intentionally misaligned gates in silicon and germanium based JL devices exhibit an inclined conduction channel and achieve a nearly ideal value of steep subthreshold swing (∼ 1 mV decade) at room temperature. The work provides new viewpoints to realise energy efficient JL devices through the sharp increase of drain current from off-state to on-state achieved due to intentional misalignment between front and back gates.

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Section: Resultssupporting

confidence: 73%

Transforming gate misalignment into a unique opportunity to facilitate steep switching in junctionless nanotransistors

Gupta

Kranti²

2016

Nanotechnology

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“…As we know, nonvolatile memories are a kind of critical microelectronic devices, among which ferroelectric memories have shown large potential especially in flexible nonvolatile memories based on ferroelectric polymer and oxide [12] or organic [13] semiconductors. However, till now, few works have been reported on SiNM-based nonvolatile memories, though such devices are expected to effectively reduce device dimensions, catch up with modern integrated circuit process, and overcome the obstacle in fabricating an ultrashallow junction for ‘gated resistors’ [14, 15]. Here, we report the feasibility and operation of SiNM-based ferroelectric field effect transistor (FeFET) memories.…”

Section: Introductionmentioning

confidence: 99%

Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes

Cao

Huang

et al. 2014

Nanoscale Res Lett

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The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] thin layer. FeFET devices exhibit both typical output property and obvious bistable operation. The hysteretic transfer characteristic was attributed to the electrical polarization of the ferroelectric layer which could be switched by a high enough gate voltage. FeFET devices demonstrated good memory performance and were expected to be used in both low power integrated circuit and flexible electronics.

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“…However, in JL DG-MOSFET devices, because the film's centre has the lowest potential, electrons flow through it and holes migrate to the surface. 22 So the potential profiles in Fig. 5 comparing to the higher gate bias, 0.3 V in super threshold region due to the creation of less no of electron around centre.…”

Section: Device Structure Parameters and Operationmentioning

confidence: 95%

Improvements in FOMs and Thermal Effects of a III-V Compound Material Based Short-Channel Thin Film Junctionless Double Gate MOSFETs

Rout

Dutta

2021

ECS J. Solid State Sci. Technol.

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Better figure of merits (FOMs) have been achieved by using III-V compound material based junctionless double gate metal-oxide semiconductor field-effect transistors (JL DG-MOSFETs), and a thorough analysis of the device’s performance over temperature has been performed using a highly N-doped GaAs-based JL DG-MOSFET using III-V compound material GaSb. GaSb, a compound material, is employed as the source material, which is well known for its greater mobility and injection velocity property with GaAs as the channel and drain materials, to obtain more output current and less leakage current due to the development of hetero structure (GaSb-GaAs) at the source-channel interface. The dielectric material HfO2 with a high k value is utilized to reduce the gate tunneling effects of electrons and enhance the control of the gate at the 20 nm channel length. Primary and auxiliary gates are taken to include ipact ionization on drain side for reducing the Subthreshold-swing. Numerous characteristics of a DG JLMOSFET, such as Id, SS, gm, TGF, Ion/Ioff, Cgs, and fT, GFP, TFP, GTFP are explored and compared with a silicon based material. The proposed structure shows an improved results comparing to the earlier model with Id of 117 mA, SS of 15.08 mV decade−1, gm of 0.62 A V−1, TGF of 38.8 V−1, Ion/Ioff ratio of 1.89 × 10 13, Cgs of 5.86 × 10 −16 F, fT of 2.05 × 10 15 Hz, GTFP of 1.81 × 10 17 Hz/V for the improvement of FOM in RF and DC analysis.

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Bipolar effects in unipolar junctionless transistors

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Cited by 42 publications

References 17 publications

Transforming gate misalignment into a unique opportunity to facilitate steep switching in junctionless nanotransistors

Transforming gate misalignment into a unique opportunity to facilitate steep switching in junctionless nanotransistors

Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes

Improvements in FOMs and Thermal Effects of a III-V Compound Material Based Short-Channel Thin Film Junctionless Double Gate MOSFETs

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