2017
DOI: 10.1016/j.solmat.2016.12.044
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Improved stability of CdTe solar cells by absorber surface etching

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Cited by 38 publications
(16 citation statements)
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“…Similar native oxides and chlorides have been observed on CdTe surfaces treated by CdCl 2 . Raman spectroscopy analysis revealed a significant increase in the intensity of stretching modes of Te–Te vibrations after the HI treatment (Figure d), indicating the formation of a Te‐rich back surface as reported in the literature . For the HI‐treated device, the Te concentration is higher than Cd in the surface region.…”
Section: Resultssupporting
confidence: 83%
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“…Similar native oxides and chlorides have been observed on CdTe surfaces treated by CdCl 2 . Raman spectroscopy analysis revealed a significant increase in the intensity of stretching modes of Te–Te vibrations after the HI treatment (Figure d), indicating the formation of a Te‐rich back surface as reported in the literature . For the HI‐treated device, the Te concentration is higher than Cd in the surface region.…”
Section: Resultssupporting
confidence: 83%
“…[14,15] Raman spectroscopy analysis revealed a significant increase in the intensity of stretching modes of Te-Te vibrations after the HI treatment (Figure 1d), indicating the formation of a Te-rich back surface as reported in the literature. [16] For the HItreated device, the Te concentration is higher than Cd in the surface region. After 2 cycles of sputtering (%6 nm), the surface is no longer Te rich as shown in the AES results ( Figure S1b, Supporting Information).…”
Section: Solar Cell Performancementioning
confidence: 99%
“…The VE‐Cu sample shows two deeper dominant defects (C) in the range of 0.43 to0.45 eV above the valence band, usually detected in our standard samples, which are not clearly attributed. Beach et al as well as Wei et al consider plausible to assign these values to the U‐centre Te 2− i : a deep acceptor level.…”
Section: Resultsmentioning
confidence: 62%
“…From this analysis, we can conclude that depositing CuCl 2 on a Te rich layer (generated by the Br‐MeOH etching), the Te binds with Cu during the annealing step oxidizing to a very limited extent. This is another part of the jigsaw that explains the higher performance of the back contact, because Cu x Te buffer binds Cu and reduces its diffusion in the bulk as shown by Wu et al This buffer can also be generated by depositing copper on the bromine‐methanol etched CdTe surface as shown by Rimmaudo et al…”
Section: Resultsmentioning
confidence: 99%
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