Improved Reverse Leakage Current in GaInN-Based LEDs With a Sputtered AlN Buffer Layer

Han, Dong‐Pyo; Ishimoto, Seiji; Mano, Ryoya; Lu, Weifang; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

doi:10.1109/lpt.2019.2952106

Cited by 4 publications

(2 citation statements)

References 23 publications

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“…The current leakage mechanism of the SBD devices can be investigated by Poole−Frenkel emission (PFE) model and Fowler−Nordheim (FN) tunneling model. Among them, PFE model is a temperature-dependent leakage current mechanism at a weak electric field, and its leakage current I PF can be defined as follows [35] :…”

Section: Analysis On Current Leakage Mechanism Of Npolarity Gan Sbd D...mentioning

confidence: 99%

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Xu,

Deng,

et al. 2024

J. Semicond.

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A nitrogen-polarity (N-polarity) GaN-based high electron mobility transistor (HEMT) shows great potential for high-frequency solid-state power amplifier applications because its two-dimensional electron gas (2DEG) density and mobility are minimally affected by device scaling. However, the Schottky barrier height (SBH) of N-polarity GaN is low. This leads to a large gate leakage in N-polarity GaN-based HEMTs. In this work, we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes (SBDs) with Ni/Au electrodes. Our results show that the annealing time and temperature have a large influence on the electrical properties of N-polarity GaN SBDs. Compared to the N-polarity SBD without annealing, the SBH and rectification ratio at ±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700, respectively, and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process. Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the interface state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emission from the trap state at low reverse bias.

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Section: Analysis On Current Leakage Mechanism Of Npolarity Gan Sbd D...mentioning

confidence: 99%

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Xu,

Deng,

et al. 2024

J. Semicond.

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“…Considering these advantages, improved crystallinity and reduced residual stress in an undoped-GaN (u-GaN) template layer grown on a c -sapphire substrate have been demonstrated by replacing a conventional in situ LT-GaN buffer layer with an ex-situ sp-AlN buffer layer [ 29 ]. Taking such improvements, an improved internal quantum efficiency (IQE) of green and ultraviolet-emitting QWs grown thereon has been demonstrated [ 27 , 29 , 30 , 31 ].…”

Section: Introductionmentioning

confidence: 99%

Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer

Zheng,

Min,

Kim

et al. 2023

Materials

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This study attempted to improve the internal quantum efficiency (IQE) of 580 nm emitting Ga0.70In0.30N/GaN quantum-wells (QWs) through the replacement of a conventional c-sapphire substrate and an in-situ low-temperature GaN (LT-GaN) buffer layer with the ScAlMgO4 (0001) (SCAM) substrate and an ex-situ sputtered-AlN (sp-AlN) buffer layer, simultaneously. To this end, we initially tried to optimize the thickness of the sp-AlN buffer layer by investigating the properties/qualities of an undoped-GaN (u-GaN) template layer grown on the SCAM substrate with the sp-AlN buffer layer in terms of surface morphology, crystallographic orientation, and dislocation type/density. The experimental results showed that the crystallinity of the u-GaN layer grown on the SCAM substrate with the 30 nm thick sp-AlN buffer layer [GaN/sp-AlN(30 nm)/SCAM] was superior to that of the conventional u-GaN template layer grown on the c-sapphire substrate with an LT-GaN buffer layer (GaN/LT-GaN/FSS). Notably, the experimental results showed that the structural properties and crystallinity of GaN/sp-AlN(30 nm)/SCAM were considerably different from those of GaN/LT-GaN/FSS. Specifically, the edge-type dislocation density was approximately two orders of magnitude higher than the screw-/mixed-type dislocation density, i.e., the generation of screw-/mixed-type dislocation was suppressed through the replacement, unlike that of the GaN/LT-GaN/FSS. Next, to investigate the effect of replacement on the subsequent QW active layers, 580 nm emitting Ga0.70In0.30N/GaN QWs were grown on the u-GaN template layers. The IQEs of the samples were measured by means of temperature-dependent photoluminescence efficiency, and the results showed that the replacement improved the IQE at 300 K by approximately 1.8 times. We believe that the samples fabricated and described in the present study can provide a greater insight into future research directions for III-nitride light-emitting devices operating in yellow–red spectral regions.

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Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Zhao

Peng

et al. 2021

Materials Letters

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Improved Reverse Leakage Current in GaInN-Based LEDs With a Sputtered AlN Buffer Layer

Cited by 4 publications

References 23 publications

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer

Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

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