Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Zhao, Ying; Xu, Shengrui; Peng, Ruoshi; Du, Jinjuan; Fan, Xiaomeng; Tao, Hongchang; Zhang, Jincheng; Zhang, Jinfeng; Feng, Li

doi:10.1016/j.matlet.2021.129783

Cited by 3 publications

(2 citation statements)

References 17 publications

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“…Some advantages of a SiC substrate include its wide bandgap, high levels of chemical and mechanical stability, and relatively close lattice match with InGaN, facilitating the epitaxial growth of high-quality InGaN films. However, the temperature needed for the growth of InGaN on SiC can be quite high, often surpassing 1000 • C, and SiC substrates can be more expensive than other frequently used substrates like sapphire or silicon [47].…”

Section: Sicmentioning

confidence: 99%

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Jafar,

Jiang,

et al. 2023

Crystals

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The optimization of the synthesis of III-V compounds is a crucial subject in enhancing the external quantum efficiency of blue LEDs, laser diodes, quantum-dot solar cells, and other devices. There are several challenges in growing high-quality InGaN materials, including the lattice mismatch between GaN and InGaN causing stress and piezoelectric polarization, the relatively high vapor pressure of InN compared to GaN, and the low level of incorporation of indium in InGaN materials. Furthermore, carrier delocalization, Shockley–Read–Hall recombination, auger recombination, and electron leakage in InGaN light-emitting diodes (LEDs) are the main contributors to efficiency droop. The synthesis of high-quality III-V compounds can be achieved by optimizing growth parameters such as temperature, V/III ratios, growth rate, and pressure. By reducing the ammonia flow from 200 sccm to 50 sccm, increasing the growth rate from 0.1 to 1 m/h, and lowering the growth pressure from 250 to 150 Torr, the external quantum efficiency of III-V compounds can be improved at growth temperatures ranging from 800 °C to 500 °C. It is crucial to optimize the growth conditions to achieve high-quality materials. In addition, novel approaches such as adopting a microrod crystal structure, utilizing the piezo-phototronic effect, and depositing AlN/Al2O3 on top of the P-GaN and the electron-blocking layer can also contribute to improving the external quantum efficiency. The deposition of a multifunctional ultrathin layers of AlN/Al2O3 on top of the P-GaN can enhance the peak external quantum efficiency of InGaN blue LEDs by 29%, while the piezo-phototronic effect induced by a tensile strain of 2.04% results in a 183% increase in the relative electroluminescence intensity of the LEDs. This paper also discusses conventional and inverted p-i-n junction structures of LEDs.

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Section: Sicmentioning

confidence: 99%

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Jafar,

Jiang,

et al. 2023

Crystals

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“…Flexible optoelectronic devices (FOEDs), such as light-emitting diodes (LEDs) and photodetectors (PDs), are key components for their applications in curved/stretchable lighting, , foldable display, and wearable sensors. , Among the current basic material systems (e.g., organic semiconductor, − two-dimensional transition metal disulfide compound, perovskite, , and inorganic compound semiconductor , ) for the FOED fabrication, the wide-band gap III-nitride possesses unique properties of tunable direct band gap (e.g., AlGaN, 3.4–6.2 eV), excellent thermal/chemical stability, and large breakdown voltage, which are crucial for the FOEDs working in the UV region . Generally, the heteroepitaxy of III-nitride requires the substrates in matched epitaxial orientation, excellent stability at high temperature, and atomic surface flatness; until now, polished sapphire, silicon, and silicon carbide are used. − However, there is a discrepancy between the natural substrate rigidity and FOED flexibility. Hence, the further separation and transfer of the III-nitride membrane onto flexible substrates are essential.…”

Section: Introductionmentioning

confidence: 99%

Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device

Chen

Shi

Zhang

et al. 2023

ACS Appl. Mater. Interfaces

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Flexible III-nitride-based optoelectronic devices are crucial for the next-generation foldable/wearable lighting sterilization and sensor working in the ultraviolet (UV) region. However, the strong bonding effect at the epitaxial interface of III-nitride and bare sapphire substrate makes it difficult for epilayer separation and flexible applications. Although the emerging van der Waals epitaxy (vdWE) with graphene insertion layer offers a feasible route for weakening the interfacial adhesion, the intact centimeter-transferable III-nitride membrane still remains challenging. The spontaneous delamination occurs due to the too weak interfacial adhesion of pure vdW force, and on the contrary, the structural damage of graphene by high-temperature hydrogen etching during the III-nitride growth might also cause separation failure. Up to now, the efficient control of vdWE interfacial adhesion is still an on-going research hotspot. Herein, we demonstrate the interfacial adhesion control of III-nitride vdWE by utilizing graded high-temperature nitridation treatment of the graphene insertion layer, which generates defects and N doping in different levels. The corresponding epitaxial modes of pure-vdWE, quasi-vdWE, and mixed epitaxy are achieved according to the interfacial adhesion difference. It reveals that the quasi-vdWE enabled by small graphene defects and proper N doping triggers the low formation energy for AlN nucleation; meanwhile, the proper interfacial adhesion ensures the growth integrality and intact separation of III-nitride membrane in the centimeter scale. The UV resin-assisted bonding technique is proposed for the successful transfer of III-nitride onto a flexible substrate. The flexible photodetector is fabricated by using a graphene monolayer as the photocarrier transport channel, and it achieves a high device yield of 90%, retaining ∼60% of its initial performance after 250 bending cycles. This work offers the promising strategy for controlling vdWE interfacial adhesion, and the separable and transferable III-nitride membrane lays the foundation for advances of future UV foldable and wearable devices.

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The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

Gao,

Wang,

et al. 2024

Journal of Alloys and Compounds

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Performance enhancement of InGaN/GaN MQWs grown on SiC substrate with sputtered AlN nucleation layer

Cited by 3 publications

References 17 publications

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency

Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device

The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

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