Improved performance of Ta2O5−x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage

Abstract

Resistive-switching memory with ultralow-power consumption is very promising technology for next-generation data storage and high-energy-efficiency neurosynaptic chips. Herein, Ta2O5−x-based multilevel memories with ultralow-power consumption and good data retention were achieved by simple Gd-doping. The introduction of a Gd ion, as an oxygen trapper, not only suppresses the generation of oxygen vacancy defects and greatly increases the Ta2O5−x resistance but also increases the oxygen-ion migration barrier. As a result, the memory cells can operate at an ultralow current of 1 μA with the extrapolated retention time of >10 years at 85 °C and the high switching speeds of 10 ns/40 ns for SET/RESET processes. The energy consumption of the device is as low as 60 fJ/bit, which is comparable to emerging ultralow-energy consumption (<100 fJ/bit) memory devices.

Biodegradable Natural Pectin‐Based Flexible Multilevel Resistive Switching Memory for Transient Electronics

“…For the nano‐sized CFs, the surface area to volume ratio increases as the size decreases, and the temperature effect would fade (decreasing of α value) due to the significant effect of surface diffuse scattering . Therefore, it is believed that the modulation of CFs' effective size is responsible for different LRS resistances at various CCs . This is consistent with electrochemical metallization theory that during the RS process, the metal cations can indeed be reduced by capturing incoming free electrons, resulting in CFs connecting the electrodes.…”

“…As a consequence, the cell showed four states including one HRS and three LRSs. For RS memory, it is known that there is a dilemma between low CCs (<1 mA, conventionally) and data retention because of the instability of small‐sized conductive path, leading to a volatile switching. The retention ability of multilevel resistance states was evaluated in Figure b, these four resistance states showed stable retention for longer than 10 4 s under a constant read voltage of 0.1 V, indicating the good data retention of Ag/pectin/ITO memory.…”

Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive‐Switching Memory Behaviors

“…This migration barrier can be estimated by measuring the SET switching time as a function of temperature. A schematic diagram of the test circuit in a pulse model is illustrated in Figure a, more details on this test method can be found in the Experimental Section and our previous publications . Herein, the GO‐TiO 2 memory cells without UV irradiation and with 15 min irradiation were used for comparison, and the TiO 2 concentration was fixed at 10 wt%.…”

Memristors with organic‐inorganic halide perovskites

“…However, compared with high performance metal oxides-based memristors, [64][65][66][67][68] the endurance characteristics and power consumption of the OHPs-based memristors should be improved for further practical memory applications. In addition, some effective methods that have been carried out previously to improve the memristive performances would also applicable in OHPs-based memristors, such as embedding metal clusters, [120][121][122] introducing porous layer, [123][124][125][126] and doping, [127][128][129] and so on.…”