Resistive-switching memory with ultralow-power consumption is very promising technology for next-generation data storage and high-energy-efficiency neurosynaptic chips. Herein, Ta2O5−x-based multilevel memories with ultralow-power consumption and good data retention were achieved by simple Gd-doping. The introduction of a Gd ion, as an oxygen trapper, not only suppresses the generation of oxygen vacancy defects and greatly increases the Ta2O5−x resistance but also increases the oxygen-ion migration barrier. As a result, the memory cells can operate at an ultralow current of 1 μA with the extrapolated retention time of >10 years at 85 °C and the high switching speeds of 10 ns/40 ns for SET/RESET processes. The energy consumption of the device is as low as 60 fJ/bit, which is comparable to emerging ultralow-energy consumption (<100 fJ/bit) memory devices.
Various
hybrid zero-dimensional/two-dimensional (0D/2D) systems have been
developed to fabricate phototransistors with better performance compared
to two-dimensional (2D) layered materials as well as broaden potential
applications. Herein, we integrated environment-friendly InP@ZnS core–shell
QDs with high efficiency of light absorption and light-emitting properties
with bilayer MoS2 for the realization of 0D/2D mixed-dimensional
phototransistors. Interdigitated (IDT) electrodes with Pt-patterned
arrays, acting as light collectors as well as plasmonic resonators,
can further enhance light harvesting from the InP@ZnS-MoS2 hybrid phototransistors, contributing to achieving a photoresponsivity
as high as 1374 A·W–1. Moreover, thanks to
the asymmetric Pt/MoS2 Schottky junction at the source/drain
contact, a self-powered characteristic with an ultrafast speed of
21.5 μs was achieved, which is among the best performances for
2D layered material-based phototransistors. In terms of these features,
we demonstrated the artificial synapse network with short-time plasticity
based on the self-powered photodetection device. Our work reveals
the great potential of 0D/2D hybrid phototransistors for high-response,
ultrafast-speed, and self-powered photodetectors coupled with artificial
neuromorphic function.
The controllability of materials is a key factor for improving the performance of SERS substrates, which has attracted widespread attention. Hence, in this study, a kind of controllable materials constructed...
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