Improved modeling accuracy of thick metal passive SiGe/BiCMOS components for UWB using ADS momentum

Tretiakov, Y.; Groves, R.; Rascoe, J.; Mathis, C.; Foley, B.

doi:10.1109/rfic.2004.1320653

Cited by 8 publications

(3 citation statements)

References 4 publications

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“…11), which are largely employed to build inductors or transformer coils, and high-frequency interconnections. Indeed, due to the use of sub-nH inductance values, implemented by means of a high thickness-to-width ratio (t/W) structure, considerable errors in the estimation of L and Q-factor can be found [16][17][18]. However, the extension of the well-known current-sheet simulation mode to thick multi-layer structures allowed L and Q-factor to be predicted with maximum errors of 3 and 5%, respectively.…”

Section: Layout Design and Em Simulationsmentioning

confidence: 99%

A SiGe BiCMOS 24-GHz receiver front-end for automotive short-range radar

Ragonese

Scuderi

Giammello

et al. 2010

Analog Integr Circ Sig Process

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This paper presents a fully integrated SiGe BiCMOS 24-GHz receiver front-end implemented for a ultra-wideband automotive short-range radar sensor. The circuit consists of a homodyne I/Q down-converter and a 24-GHz synthesizer. The receiver front-end is able to achieve a power conversion gain as high as 30 dB and a 6-dB noise figure, while preserving high linearity performance thanks to a 1-bit gain control. The frequency synthesizer, which also includes an on-chip loop filter, guarantees a phase noise of -104 dBc/Hz at 1-MHz offset from the 24.125-GHz carrier and a 4.7-GHz tuning range from 20.4 to 25.1 GHz.

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Section: Layout Design and Em Simulationsmentioning

confidence: 99%

A SiGe BiCMOS 24-GHz receiver front-end for automotive short-range radar

Ragonese

Scuderi

Giammello

et al. 2010

Analog Integr Circ Sig Process

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“…Indeed, the EM-based design of integrated spirals requires a reliable setup of the adopted tool, especially at very-low inductance values. Specifically, multi-layer metal representation, substrate definition, and mesh arrangements have to be properly set for the highest accuracy [10][11][12]. To this aim, available measurements of single-turn spirals with different inner diameter (d IN ) were exploited.…”

Section: Performance Analysismentioning

confidence: 99%

Analysis and modeling of interstacked transformers for mm-wave applications

Ragonese

Sapone

Giammello

et al. 2011

Analog Integr Circ Sig Process

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The analysis and modeling of monolithic interstacked transformers for mm-wave applications is addressed. The performance advantages of the interstacked structure are demonstrated by using the most important figures of merit for integrated transformers and a physicbased scalable lumped model is proposed. The model components are calculated with closed-form expressions that make use of geometrical and technological parameters. The accuracy of the proposed model is demonstrated by comparison with electromagnetic data in a wide frequency range. Maximum errors are below 5, 7.5, and 2% for magnetic coupling factor, quality factor, and self-resonance frequency, respectively. High accuracy is also achieved in the modeling of S-parameters up to the self-resonance frequency.

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“…From the simulations using a commercial two-and-one-half-dimensional (2.5-D) electromagnetic (EM) solver [25], the line inductors work reasonably well at -band. The simulated inductance and are shown in Fig.…”

Section: Line Inductor Developmentmentioning

confidence: 99%

A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

Chen

Kuo

Jin

et al. 2005

IEEE Trans. Microwave Theory Techn.

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An integrated low-power low phase-noise -band differential voltage-controlled oscillator (VCO) is developed in a 0.12-m 200-GHz silicon-germanium heterojunction bipolar transistor technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for -band applications. This VCO can operate from a supply voltage of 1.6-2.5 V. A single-sideband phase noise of 99 dBc/Hz at 1-MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of 183.7 dBc/Hz. The frequency tuning constant of the VCO in the linear regime is 0.547 GHz/V.

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Improved modeling accuracy of thick metal passive SiGe/BiCMOS components for UWB using ADS momentum

Cited by 8 publications

References 4 publications

A SiGe BiCMOS 24-GHz receiver front-end for automotive short-range radar

A SiGe BiCMOS 24-GHz receiver front-end for automotive short-range radar

Analysis and modeling of interstacked transformers for mm-wave applications

A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

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