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This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-signal system-on-a-chip (SoC). The paper reviews the process development and integration methodology, presents the device characteristics, and shows how the development and device selection were geared toward usage in mixed-signal IC development.

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The effort to design RF circuits in CMOS is motivated by low cost and significant capacity for on-chip integration. We discuss some of the challenges of implementing RF designs in CMOS focusing on those introduced by the changing properties of FETs as technology nodes scale and devices shrink. We present methods and tools using which designers can ease these challenges and reduce the risk of implementing RF circuits in CMOS.

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