Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer

Lu, Hongliang; Xu, Jing-Ping; Liu, L.; Wang, Lishi; Peng, Lai; Tang, Wing Man

doi:10.1016/j.microrel.2015.10.013

Cited by 13 publications

(6 citation statements)

References 48 publications

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“…3,11−19 Metal oxynitrides have attracted attention in various fields for use in photocatalysts, 20−22 phosphors, 23,24 colossal magnetoresistive materials, 25 and high- dielectrics. 26,27 In addition, they have recently been considered as promising replacements for inorganic pigments containing toxic elements. 11,28−33 The wide bandgap of most metal oxides does not allow for visible light absorption.…”

Section: Introductionmentioning

confidence: 99%

Environmentally Benign Synthesis and Color Tuning of Strontium–Tantalum Perovskite Oxynitride and Its Solid Solutions

et al. 2021

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A facile method was successfully developed to prepare strontium-tantalum perovskite oxynitride, SrTaO 2 N, and its solid solutions. Urea was employed as a solid nitriding agent to eliminate the use of toxic NH 3 gas. In addition, utilization of sol-gel derived Ta 2 O 5 gel as a Ta precursor allowed for completion of nitridation within a shorter period and at a lower calcination temperature compared with the conventional ammonolysis process. Optimization of the reaction conditions, such as the urea content, allowed for production of solid solutions of SrTaO 2 N and Sr 1.4 Ta 0.6 O 2.9 . The products exhibited optical absorption and chromatic colors because of the narrower band gaps of oxynitrides compared with those of oxides. The O/N ratios of the solid solutions were easily adjusted by varying the amount of urea in the mixture of precursor. As a result, the colors of the products ranged from yellow to brown. The nitridation process and products developed in this study are interesting environmentally-benign alternatives to conventional inorganic pigments.

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Section: Introductionmentioning

confidence: 99%

Environmentally Benign Synthesis and Color Tuning of Strontium–Tantalum Perovskite Oxynitride and Its Solid Solutions

et al. 2021

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“…8)) have been tried on GaAs with good results achieved, but (iii) is still challenging even now. In order to improve the quality of the high-k/GaAs interface, NH 3 or F treatment 9,10 and passivating interlayer (e.g., Si, 11 Ge, 12 Al 2 O 3 , 13 ZnO, 14 and TaLaON 15 ) have been studied. However, the high D it and the easily formed unstable native oxide of GaAs still need to be suppressed to avoid the Fermi-level pinning at the high-k/ GaAs interface.…”

mentioning

confidence: 99%

High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Liu

Choi

et al. 2017

Applied Physics Letters

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A GaAs metal-oxide-semiconductor (MOS) capacitor using NbAlON as a gate dielectric with different Nb contents is fabricated. Experimental results show that the k value and crystallization temperature of the AlON dielectric can be improved by Nb incorporation, together with reduction in negative oxide charges. However, the interface quality and gate leakage become poorer as the Nb content increases, as confirmed by TEM and X-ray photoelectron spectroscopy results. Therefore, through comprehensively considering the advantages and disadvantages, the sample with a Nb/(AlþNb) atomic ratio of 62.5% exhibits the best characteristics: high k value (23.3), low interface-state density (2.7 Â 10 12 cm À2 /eV), small hysteresis (55 mV), small frequency dispersion, and low gate leakage current (2.66 Â 10 À5 A/cm 2 at V fb þ 1 V). By comparing with reported GaAs MOS devices with different high-k gate dielectrics, it can be suggested that NbAlON is a promising gate dielectric material to achieve excellent electrical performance for GaAs MOS devices.

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“…In the report of H. H. Lu et al [45,46], they treated GaAs MOS Capacitor with N 2 and NH 3 respectively at the gas flow of 4 sccm, 350 • C and power of 120 W in PECVD chamber. Both of the two plasma-passivated MOSCAP exhibited improved interfacial and electrical properties compared to the untreated one, and NH 3 -plasma passivated sample had the better effect than N 2 -plasma, which showed the lower leakage current density and interface-state density.…”

Section: Plasma Treatment and Nitridationmentioning

confidence: 99%

Brief Review of Surface Passivation on III-V Semiconductor

Zhou

Yan

et al. 2018

Crystals

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The III-V compound semiconductor, which has the advantage of wide bandgap and high electron mobility, has attracted increasing interest in the optoelectronics and microelectronics field. The poor electronic properties of III-V semiconductor surfaces resulting from a high density of surface/interface states limit III-V device technology development. Various techniques have been applied to improve the surface and interface quality, which cover sulfur-passivation, plasmas-passivation, ultrathin film deposition, and so on. In this paper, recent research of the surface passivation on III-V semiconductors was reviewed and compared. It was shown that several passivation methods can lead to a perfectly clean surface, but only a few methods can be considered for actual device integration due to their effectiveness and simplicity.

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Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH3-plasma treated yittrium-oxynitride as interfacial passivation layer

Cited by 13 publications

References 48 publications

Environmentally Benign Synthesis and Color Tuning of Strontium–Tantalum Perovskite Oxynitride and Its Solid Solutions

Environmentally Benign Synthesis and Color Tuning of Strontium–Tantalum Perovskite Oxynitride and Its Solid Solutions

High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

Brief Review of Surface Passivation on III-V Semiconductor

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