Improved HEMT model for low phase-noise InP-based MMIC oscillators

Schreurs, Dominique; Meer, H. van; Zanden, K. van der; Raedt, W. De; Nauwelaers, Bart; Capelle, Antoine Van de

doi:10.1109/22.721169

Cited by 8 publications

(3 citation statements)

References 16 publications

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“…The study of large-signal modeling of InP HEMTs has been proposed in Refs. [20,21]. Two models [22,23] proposed for use with InP HEMTs focus more on low-frequency noise.…”

Section: Introductionmentioning

confidence: 99%

An improved large signal model of InP HEMTs

Li¹,

Li²,

Liu³

2018

J. Semicond.

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An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately.

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“…The study of large-signal modeling of InP HEMTs has been proposed in Refs. [20,21]. Two models [22,23] proposed for use with InP HEMTs focus more on low-frequency noise.…”

Section: Introductionmentioning

confidence: 99%

An improved large signal model of InP HEMTs

Li¹,

Li²,

Liu³

2018

J. Semicond.

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“…The latter is based on the non-linear modelling procedure described in Ref. [2], that we originally developed for HEMTs, but adapted to account for the particularities of MOSFETs. The validation of these models under single-tone CW excitation conditions can only give an estimate about the expected accuracy under realistic operating conditions [3].…”

Section: Introductionmentioning

confidence: 99%

Verification of Non-Linear MOSFET Models by Intermodulation Measurements Under Loadpull Conditions

Schreurs

Vandamme

Vandenberghe

et al. 2000

55th ARFTG Conference Digest

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The trend towards system-on-chip realisation tightens the design specifications and consequently imposes high accuracy requirements on device models. Hence, model validations by only singletone CW excitations do no longer suffice, because the obtained accuracy can not straightforwardly be extrapolated to an expected accuracy under realistic large-signal operating conditions. We developed a measurement set-up that enables to characterise the amplitude and phase of intermodulation products at different load impedances, which can serve as an important verification tool with regard to power amplifier applications. This technique is applied to evaluate two non-linear MOSFET model representations: the compact BSIM3v3 model and the in-house developed look-up table model. We show that for both model types the phase disagreement is more pronounced than the amplitude inaccuracy. We also stress the importance of an adequate de-embedding of the bonding pads and access transmission lines.

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“…Therefore, we developed an advanced nonlinear modeling method based on optimization [7]. State functions are typically represented by lookup tables [8], [9] or by parametric models. The latter are characterized by a number of parameters of which the values can be estimated through optimization.…”

mentioning

confidence: 99%

Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements

Schreurs

Verspecht

Vandenberghe

et al. 2002

IEEE Trans. Microwave Theory Techn.

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Abstract-To model nonlinear device behavior at microwave frequencies, accurate large-signal models are required. However, the standard procedure to estimate model parameters is often cumbersome, as it involves several measurement systems (dc, vector network analyzer, etc.). Therefore, we propose a new nonlinear modeling technique, which reduces the complexity of the model generation tremendously and only requires full two-port vectorial large-signal measurements. This paper reports on the results obtained with this new modeling technique applied to both empirical and artificial-neural-network device models. Experimental results are given for high electron-mobility transistors and MOSFETs. We also show that realistic signal excitations can easily be included in the optimization process.

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Improved HEMT model for low phase-noise InP-based MMIC oscillators

Cited by 8 publications

References 16 publications

An improved large signal model of InP HEMTs

An improved large signal model of InP HEMTs

Verification of Non-Linear MOSFET Models by Intermodulation Measurements Under Loadpull Conditions

Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements

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