This is the definitive guide to X-parameters, written by the original inventors and developers of this powerful new paradigm for nonlinear RF and microwave components and systems. Learn how to use X-parameters to overcome intricate problems in nonlinear RF and microwave engineering. The general theory behind X-parameters is carefully and intuitively introduced, and then simplified down to specific, practical cases, providing you with useful approximations that will greatly reduce the complexity of measuring, modeling and designing for nonlinear regimes of operation. Containing real-world case studies, definitions of standard symbols and notation, detailed derivations within the appendices, and exercises with solutions, this is the definitive stand-alone reference for researchers, engineers, scientists and students looking to remain on the cutting-edge of RF and microwave engineering.
Abstract-To model nonlinear device behavior at microwave frequencies, accurate large-signal models are required. However, the standard procedure to estimate model parameters is often cumbersome, as it involves several measurement systems (dc, vector network analyzer, etc.). Therefore, we propose a new nonlinear modeling technique, which reduces the complexity of the model generation tremendously and only requires full two-port vectorial large-signal measurements. This paper reports on the results obtained with this new modeling technique applied to both empirical and artificial-neural-network device models. Experimental results are given for high electron-mobility transistors and MOSFETs. We also show that realistic signal excitations can easily be included in the optimization process.
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