Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Liao, Yaqiang; Chen, Tao; Wang, J.; Cai, Wentao; Ando, Yoshinobu; Yang, Xu; Watanabe, Hirotaka; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Chen, Kevin J.; Amano, Hiroshi

doi:10.1063/5.0083194

Cited by 4 publications

(3 citation statements)

References 33 publications

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“…Termination structure Turn-on voltage (V) Ron (mΩ•cm 2 ) V br (V) [69] Field plate -1.1 680 [70] Field plate -0.89 620 [72] Field plate --186 [73] Field plate --790 [74] Implanted field rings --1650 [75] Implanted field rings 0.8 2 700 [77] Implanted field rings -1.2 995 [78] Implanted field rings 0.85 1.08 820 [79] Implanted field rings -7.2 1364 [80] Floating metal rings --290 [82] Graded AlGaN drift layer 0.77 5 800 [22] Dual GaN drift layer 0.59 1.65 503 [83] Mg-compensated drift layer --1480 [84] Nanowire drift layer -0.15 515 [85] Nanorod drift layer 0.65 -772…”

Section: Referencementioning

confidence: 99%

“…The SBD with 800 nm diameter nanowire had a high current density of more than 1 kA cm −2 at a voltage of 2.2 V, and the on-resistance was 0.15 Ω•cm 2 . The breakdown voltage was up to 515 V. In 2022, they [85] optimized this etching method by treating the nanowire array in 2.38% TMAH solution for 10 min at 50 • C, which improved the surface quality of the GaN sidewall. The device had a 0.65 V turn-on voltage, a 772 V breakdown voltage and a weak current collapse effect, showing a good dynamic performance.…”

Section: Drift Layer Optimizationmentioning

confidence: 99%

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Research progress and prospect of GaN Schottky diodes

Shao,

Zhang,

et al. 2023

J. Phys. D: Appl. Phys.

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GaN (gallium nitride), as a third-generation semiconductor (wide-band semiconductor) material, is widely used in the fabrication of power devices with an excessive breakdown voltage and a low on-resistance due to the material’s excellent properties. Starting from the three basic structures, this paper analyses and summarizes the research progress of GaN SBD (schottky barrier diode) in recent years. The design and optimization methods of GaN-based SBD are introduced from various aspects, such as anode structure, termination type, epitaxial structure and substrate. The advantages and disadvantages of GaN-based SBD of different structures and the problems in the research process are summarized, and the future application fields of GaN-based SBD devices are prospected.

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Section: Referencementioning

confidence: 99%

Section: Drift Layer Optimizationmentioning

confidence: 99%

Research progress and prospect of GaN Schottky diodes

Shao,

Zhang,

et al. 2023

J. Phys. D: Appl. Phys.

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“…Materials known as III-V binary nitrides (III-N = AlN, SiC, and GaN) [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ] and their related alloys have recently drawn attention owing to their outstanding optoelectronic properties making them useful for many practical applications, such light-emitting diode lasers (LEDs). The reasons for their successful application are their plethora of physical characteristics, such as their small lattice parameter, large direct bandgap, high hardness, high temperature stability, good piezoelectric properties, and polytypism.…”

Section: Introductionmentioning

confidence: 99%

Ground-State Structure of Quaternary Alloys (SiC)1−x (AlN)x and (SiC)1−x (GaN)x

2023

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Despite III-nitride and silicon carbide being the materials of choice for a wide range of applications, theoretical studies on their quaternary alloys are limited. Here, we report a systematic computational study on the electronic structural properties of (SiC)x (AlN)1−x and (SiC)x (AlN)1−x quaternary alloys, based on state-of-the-art first-principles evolutionary algorithms. Trigonal (SiCAlN, space group P3m1) and orthorhombic (SiCGaN, space group Pmn21) crystal phases were as predicted for x = 0.5. SiCAlN showed relatively weak thermodynamic instability, while that of SiCGaN was slightly elevated, rendering them both dynamically and mechanically stable at ambient pressure. Our calculations revealed that the Pm31 crystal has high elastic constants, (C11~458 GPa and C33~447 GPa), a large bulk modulus (B0~210 GPa), and large Young’s modulus (E~364 GPa), and our results suggest that SiCAlN is potentially a hard material, with a Vickers hardness of 21 GPa. Accurate electronic structures of SiCAlN and SiCGaN were calculated using the Tran–Blaha modified Becke–Johnson semi-local exchange potential. Specifically, we found evidence that SiCGaN has a very wide direct bandgap of 3.80 eV, while that of SiCAlN was indirect at 4.6 eV. Finally, for the quaternary alloys, a relatively large optical bandgap bowing of ~3 eV was found for SiCGaN, and a strong optical bandgap bowing of 0.9 eV was found for SiCAlN.

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Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates

Kamiński,

Taube,

Tarenko

et al. 2024

Physica Status Solidi (a)

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Herein, the fabrication and characterization of vertical GaN trench‐MOSFETs on ammonothermally grown bulk GaN substrates have been reported. A number of technological processes have been developed, including, among others, low‐resistance ohmic contacts to Ga‐face n‐GaN epitaxial layers, N‐face backside ohmic contact, vertical sidewall trench etching processes, surface preparation, and atomic layer deposition of gate dielectric layers and integrated with fabrication process flow of vertical power devices. The fabricated test structures are characterized by an output drain current of 288 ± 74 mA mm−1, threshold voltage of about 10 V, and field‐effect channel mobility 13.1 ± 5.0 cm2 (Vs)−1 at 10 V drain‐source voltage and up to 65 cm2 (Vs)−1 at 0.1 V drain‐source voltage. In addition, first, experiments toward high current multicell transistor fabrication are carried out. Multicell test devices with hexagonal topology with a total gate width of 11.1 mm and output current over 1 A are successfully fabricated and characterized.

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Improved device performance of vertical GaN-on-GaN nanorod Schottky barrier diodes with wet-etching process

Cited by 4 publications

References 33 publications

Research progress and prospect of GaN Schottky diodes

Research progress and prospect of GaN Schottky diodes

Ground-State Structure of Quaternary Alloys (SiC)1−x (AlN)x and (SiC)1−x (GaN)x

Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates

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