Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
Maciej Kamiński,
Andrzej Taube,
Jaroslaw Tarenko
et al.
Abstract:Herein, the fabrication and characterization of vertical GaN trench‐MOSFETs on ammonothermally grown bulk GaN substrates have been reported. A number of technological processes have been developed, including, among others, low‐resistance ohmic contacts to Ga‐face n‐GaN epitaxial layers, N‐face backside ohmic contact, vertical sidewall trench etching processes, surface preparation, and atomic layer deposition of gate dielectric layers and integrated with fabrication process flow of vertical power devices. The f… Show more
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