Improved adhesion of CVD diamond films to steel and WCCo substrates

Nesládek, Miloš; Spinnewyn, J.; Asinari, C.; Lebout, R.; Lorent, R.

doi:10.1016/0925-9635(94)90038-8

Cited by 54 publications

(14 citation statements)

References 5 publications

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“…Later Nesladek et al [116,117] proposed a stress relief multilayer structure (Mo/Ag/Nb) and got good adhesion. So far, single interlayer materials that have been reported include Si, TiN, W, Mo, Ti, Cr-N etc.…”

Section: Materials With Strong Carbon Dissolving and Weak Carbide Formentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

239

152

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This paper reviews the growth of diamond by chemical vapour deposition (CVD). It includes the following seven parts: (1) Properties of diamond: this part briefly introduces the unique properties of diamond and their origin and lists some of the most common diamond applications. (2) Growth of diamond by CVD: this part reviews the history and the methods of growing CVD diamond. (3) Mechanisms of CVD diamond growth: this part discusses the current understanding on the growth of metastable diamond from the vapour phase. (4) Characterization of CVD diamond: we discuss the two most common techniques, Raman and XRD, which have been intensively employed for characterizing CVD diamond. (5) CVD diamond growth characteristics: this part demonstrates the characteristics of diamond nucleation and growth on various types of substrate materials. (6) Nanocrystalline diamond: in this section, we present an introduction to the growth mechanisms of nanocrystalline diamond and discuss their Raman features. This paper provides necessary information for those who are starting to work in the field of CVD diamond, as well as for those who need a relatively complete picture of the growth of CVD diamond.

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Section: Materials With Strong Carbon Dissolving and Weak Carbide Formentioning

confidence: 99%

Diamond growth by chemical vapour deposition

Grácio¹,

Fan²,

Madaleno³

2010

J. Phys. D: Appl. Phys.

239

152

View full text Add to dashboard Cite

show abstract

“…The metallization of diamond is an effective way to improve the contact performance between diamond and metal substrate. 5,7 The adhesive strength mainly comes from the interface diffusion and chemical reaction, thus it is very important to understand the diffusion and reaction mechanism on the interface of metal/diamond during the metallization of diamond.…”

Section: Introductionmentioning

confidence: 99%

Application of AES line shape analysis for the identification of interface species during the metallization of diamond particles

Zhu¹,

Yao²,

Zheng³

et al. 1999

Surf. Interface Anal.

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Auger electron spectroscopy (AES) has been used to investigate the interface diffusion and chemical reaction on the interface of a metal/diamond sample during the metallization of diamond particles. The results indicated that a Ti layer reacted with the diamond particles to form a TiC surface layer after the sample was annealed at 600 °C for 4 h. The diffusion process of carbon atoms from diamond substrate into the Ti layer was the key step for the formation of a TiC surface layer. A Cr metallization layer reacted with the diamond particles to form CrC and Cr2C3 surface layers. The formation of the carbide layer was governed by the interface reaction. The CrC and Cr2C3 species cannot be distinguished using Cr LMM line shape but it can be distinguished using Cr MVV line shape. The AES line shape analysis is useful for studying the interface reaction and identifying the interface species. Copyright © 1999 John Wiley & Sons, Ltd.

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“…Regarding diamond, film deposition technique of diamond was available in an industrial level and sufficient adhesiveness to the substrate could be obtained. 4,5 Pure diamond is the electrical insulator and cannot be used as an electrode for electrochemical reactions. Doping of different species such as boron and phosphorus enabled diamond to become electrically conductive.…”

Section: Introductionmentioning

confidence: 99%

Electrochemically Catalytic Activity of Boron-doped Diamond for I<sup>−</sup>/I<sup>0</sup> Redox Couple

Kawakita¹,

Shinoda

Sakamoto

2015

Electrochemistry

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Boron-doped diamond (BDD) is promising as electrocatalyst for alternative material to platinum (Pt) because of its superior chemical stability. Electrochemically catalytic activity of BDD on the redox couple of I − /I 0 was studied by using the electrochemical method. It showed the parabolic dependence on the doping level of boron in diamond and the maximum value was 0.94 µA/cm 2 in terms of the exchanging current density. This value is slightly higher than graphite and smaller than Pt. Additional surface modification of BDD could improve the catalytic activity.

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Improved adhesion of CVD diamond films to steel and WCCo substrates

Cited by 54 publications

References 5 publications

Diamond growth by chemical vapour deposition

Diamond growth by chemical vapour deposition

Application of AES line shape analysis for the identification of interface species during the metallization of diamond particles

Electrochemically Catalytic Activity of Boron-doped Diamond for I<sup>−</sup>/I<sup>0</sup> Redox Couple

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Improved adhesion of CVD diamond films to steel and WCCo substrates

Cited by 54 publications

References 5 publications

Diamond growth by chemical vapour deposition

Diamond growth by chemical vapour deposition

Application of AES line shape analysis for the identification of interface species during the metallization of diamond particles

Electrochemically Catalytic Activity of Boron-doped Diamond for I<sup>&minus;</sup>/I<sup>0</sup> Redox Couple

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Electrochemically Catalytic Activity of Boron-doped Diamond for I<sup>−</sup>/I<sup>0</sup> Redox Couple