Importance of the band gap energy and flat band potential for application of modified TiO2 photoanodes in water photolysis

Radecka, M.; Rękas, M.; Trenczek-Zając, Anita; Zakrzewska, K.

doi:10.1016/j.jpowsour.2007.10.082

Cited by 361 publications

(241 citation statements)

References 40 publications

Supporting

Mentioning

225

Contrasting

Unclassified

Order By: Relevance

“…Although the M-S equations were derived based on a flat electrode, this analysis has been widely used to irregular geometries with porous surfaces such as nanostructures [ [4,16,54]. If the depletion layer is very thin, photons can penetrate beyond this layer and light will be absorbed in the bulk semiconductor, where the electrical field is absent [4,16,54,55].…”

Section: Mott-schottky Analysismentioning

confidence: 99%

Enhancement of photoelectrochemical activity for water splitting by controlling hydrodynamic conditions on titanium anodization

Sánchez-Tovar

Fernández‐Domene

García-García

et al. 2015

Journal of Power Sources

View full text Add to dashboard Cite

show abstract

Section: Mott-schottky Analysismentioning

confidence: 99%

Enhancement of photoelectrochemical activity for water splitting by controlling hydrodynamic conditions on titanium anodization

Sánchez-Tovar

Fernández‐Domene

García-García

et al. 2015

Journal of Power Sources

View full text Add to dashboard Cite

show abstract

“…A photoanodic spike is usually observed after the light has been switched on, which flattens out after a certain period of time reaching the stable current value. The cause of the spike is a separation of electron hole pairs at the surface of the semiconductor [59]. …”

Section: Figure 45: Illustration Of a Three Electrode Setup For Voltmentioning

confidence: 99%

Deep level related photoluminescence in ZnMgO

Trunk

Venkatachalapathy

Galeckas

et al. 2010

Applied Physics Letters

View full text Add to dashboard Cite

Zinc oxide (ZnO) has been used in a wide range of products for many years, including, among others, varistors, surface acoustic wave devices and cosmetics. Besides these established applications, ZnO and its ternary alloys are now also being considered as potential materials for optoelectronic applications, such as light emitting diodes, photovoltaics, sensors, displays, etc. Unlike other materials, which could be used alternatively, ZnO has the advantage of being inexpensive, chemically stable and relatively plentiful. In spite of the long research history, fabrication of defect free ternary alloys and stable p-type ZnO is still challenging. The aim of this work was therefore to provide a better understanding of ZnO ternary alloys, so that -based on the gained knowledge -their optical properties can be further improved and, in a second step, optoelectronic applications based on these materials can soon be commercialized. The work carried out in this thesis was two-fold: the first part aimed at identifying the origin of defect related luminescence phenomena in ZnMgO, and the second part was dedicated to the exploration of a novel ZnCdO-based heterostructure photovoltaic applications.In the case of ZnMgO, luminescence properties of deep level defects were studied by photoluminescence (PL) spectroscopy and a model was proposed to explain the changes in the deep band emission with increasing Mg content. In this model, the observed trends can be understood by considering interaction of native zinc and oxygen defects of the ZnO sublattice with Mg interstitials (Mg i ). In summary, the deep level bands at 3.0 and 2.8 eV, which show a blueshift with increasing Mg content, were assigned to free-to-bound type transitions between zinc interstitials (Zn i ) with the valence band edge and between the conduction band edge with zinc vacancies (V Zn ), respectively. A red band at 2.0 eV, which does not show an apparent shift of the peak energy for increasing Mg content, is associated with the oxygen vacancies (V O ). Two luminescence bands at 2.3 and 2.5 eV, which are redshifted for higher Mg concentrations, were assigned to transitions between zinc and oxygen interstitials and between zinc interstitials and zinc vacancies, respectively. The redshift is interpreted in terms of a competing supply of electrons from slightly deeper Mg i donor states. The ZnMgO band gap diagram, which the model is based on, has contributed to gain valuable information about the nature of the deep defects both in ZnO and ZnMgO and is therefore of fundamental interest.In the second part of this work, focused on ZnCdO, a stacked heterostructure was designed for iii iv Abstract application in a photoelectrochemical cell, which is used for hydrogen production by photoelectrolysis using the semiconductor as an absorber. Optical and photoelectrochemical measurements led to the conclusion that the optical emission band for the ZnCdO heterostructures is broadened compared to a ZnO single layer. The broadened emission could be explained by combined ...

show abstract

“…However, the influence of V fb change on the performance of hydrogen production is still obscure. Radecka et al (2008) suggested that the flat band potential affects the recombination probability. If that were true, the downward shift of flat band potential would be harmful to the reduction of the recombination.…”

Section: Samplementioning

confidence: 99%

Enhancement of photoelectrochemical activity of nanocrystalline CdS photoanode by surface modification with TiO2 for hydrogen production and electricity generation

et al. 2012

View full text Add to dashboard Cite

Importance of the band gap energy and flat band potential for application of modified TiO2 photoanodes in water photolysis

Cited by 361 publications

References 40 publications

Enhancement of photoelectrochemical activity for water splitting by controlling hydrodynamic conditions on titanium anodization

Enhancement of photoelectrochemical activity for water splitting by controlling hydrodynamic conditions on titanium anodization

Deep level related photoluminescence in ZnMgO

Enhancement of photoelectrochemical activity of nanocrystalline CdS photoanode by surface modification with TiO2 for hydrogen production and electricity generation

Contact Info

Product

Resources

About