Implications of alkaline solutions-induced etching on optical and minority carrier lifetime features of monocrystalline silicon

Optimization of a silicon wafer texturing process by modifying the texturing temperature for heterojunction solar cell applications

“…This indicates that the nucleation and growth of the pyramids occur simultaneously. This agrees with the observations of Bachtouli et al 16 From Fig. 2(a) and (b), we can conclude that at 80 C the etching rate is too high to be controlled easily.…”

Evolution of the Charge Carrier Lifetime Characteristics in Crystalline Silicon Wafers During Processing of Heterojunction Solar Cells

“…saw damage etched), which seems to be in contradiction to the generation of additional interface defects due to the increased effective surface area and crystallographic imperfections imposed by the texturization, as was revealed by surface photovoltage (SPV) measurements [7,12]. However, as explained by Bachtouli et al [13], internal reflections at the front and back side of the textured Si wafer lead to an increased light absorption and, thus, an enhanced real generation rate. Accordingly, an additional photoconductance is caused in the textured wafer not occurring in the reference cell used in TrPCD.…”

Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

“…Before cleaned by RCA process [9], each substrate was ultrasonically cleaned in a strict procedure with 5 minutes clean in acetone, alcohol and de-ionized water in sequence and repeated this procedure till the impurities were cleaned as little as possible.…”