Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model

Montagner, X.; Fouillat, P.; Briand, Renaud; Schrimpf, R.D.; Touboul, A.; Galloway, K.F.; Calvet, M.-C.; Calvel, P.

doi:10.1109/23.658963

Cited by 17 publications

(9 citation statements)

References 16 publications

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“…Some researchers have also investigated the impact of total dose, neutron radiation, Co-60 source irradiation, gamma rays, and other nuclear radiation on BJT modeling. [11][12][13][14] Petrosyants et al 15 investigated control methods for test environments under high and low temperatures. The model for predicting the fall time was improved in Vijayalakshmi et al 16 In Wang et al, 17 the impact of composite effects under high temperature and high current on current gain was studied.…”

Section: Introductionmentioning

confidence: 99%

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Pan,

Zhang,

Ren

et al. 2023

Circuit Theory & Apps

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SummaryBipolar junction transistors (BJTs) are widely used in various electronic systems, and the establishment of the electromagnetic compatibility (EMC) model for BJTs is crucial for EMC analysis of these systems, such as high‐frequency circuits. In this paper, a BJT EMC model that satisfies both functionality and EMC analysis requirements was established based on physical characteristic measurement. First, comprehensive and systematic methods for measurement and extracting SPICE parameters based on physical BJTs are presented, including a proposed curve‐fitting calculation method for extracting barrier capacitance parameters. Second, an analysis of the impact of major BJT electrical characteristics parameters was conducted, leading to the identification of important model parameters affecting BJT functionality and EMC. Finally, the primary BJT model was optimized using the simplex method, and a method for EMC analysis and verification of the BJT model was presented. The experimental and simulation results are in good agreement, and the established model meets the accuracy requirements for both EMC and functionality. Therefore, the proposed method is feasible and suitable for the EMC modeling of BJTs.

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Section: Introductionmentioning

confidence: 99%

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Pan,

Zhang,

Ren

et al. 2023

Circuit Theory & Apps

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“…In this class of methods one can include the estimation of some BJT parameters describing the base resistance [26], the transit time [27], the quasi-saturation e!ect [28,29], the total dose e!ects [30], the avalanche phenomena [31] and the collector signal delay e!ects [32]. The local approach is used also in the professional simulators, e.g.…”

Section: Introductionmentioning

confidence: 99%

Parameters estimation of the d.c. electrothermal model of the bipolar transistor

Zarębski

Górecki

2002

Int J Numerical Modelling

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SUMMARYThis paper concerns the problems of the parameter values estimation of d.c. electrothermal model of the BJT formulated for circuit analysis with SPICE. In this case, PARTS software available in SPICE cannot be used. In the paper, a new estimation algorithm for d.c. electrothermal model of the BJT is proposed. The form of the electrothermal BJT model is also presented. The estimation algorithm implemented into the computer-controlled measurement set allows one to derive the values of the parameters automatically after the measurements of the selected isothermal characteristics and proper calculations.

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“…Unfortunately, despite the availability of some gated PNP models [8], none of them are neither SPICE compatible nor take into account radiation-induced degradation. Nonetheless, subcircuits free of these very particular gated BJTs may be simulated using the new model proposed in [3]. This model is depicted in Fig.…”

Section: Hardening Of the Analog Functionmentioning

confidence: 99%

“…For these last devices, it is shown that a significant decrease of the base current degradation primarily due to irradiation effects can be obtained by a convenient biasing of the gate. Consequences at the simulation level are then presented with the implementation of new SPICE BJT models [3] to predict total dose degradation and the need for a new model dedicated to the gate-controlled lateral PNP device.…”

Section: Introductionmentioning

confidence: 99%

“…Modeling of radiation-induced excess base current in the SPICE Gummel-Poon model for the vertical bipolar NPN transistor.According to[3], the excess base current behavior for all the bipolar transistor types will be modeled by equation (l), which describes the low level injection excess base current by the means of two additional rad-parameters (IRo and NRO) as well as the bending at high injection level (IRK and NRK rad-parameters) :…”

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confidence: 99%

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Implementation of total dose constraints at the design level of full custom bipolar integrated circuits

Deval

Fouillat²,

Montagner³

et al.

RADECS 97. Fourth European Conference on Radiation and Its Effects on Components and Systems (Cat. No.97TH8294)

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Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model

Cited by 17 publications

References 16 publications

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

A bipolar junction transistor EMC modeling method based on physical characteristic measurement and simplex optimization

Parameters estimation of the d.c. electrothermal model of the bipolar transistor

Implementation of total dose constraints at the design level of full custom bipolar integrated circuits

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