Implementation of the IMEC-Clean in advanced CMOS manufacturing

Meuris, Marc; Arnauts, Sophia; Cornelissen, Ingrid; Kenis, Karine; Lux, Marcel; DeGendt, S.; Mertens, Paul; Teerlinck, Ivo; Vos, Rita; Loewenstein, Lee M.; Heyns, Marc; Wolke, K.

doi:10.1109/issm.1999.808761

Cited by 20 publications

(14 citation statements)

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“…300 mm blanket Si wafers are first preconditioned using an Imec clean, 21 which includes an oxidation step, an hydrofluoric acid (HF) based step and a reoxidizing passivating step to grow a clean oxide. Afterwards, 78 nm SiO 2 particles are spin coated on top of the wafer surface, to reach a concentration of about 10 6 particles= cm 2 .…”

Section: Particle Removal Efficiency (Pre)mentioning

confidence: 99%

Influence of surface tension on cavitation noise spectra and particle removal efficiency in high frequency ultrasound fields

Camerotto

Brems

Hauptmann

et al. 2012

Journal of Applied Physics

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Influence of surface tension on cavitation noise spectra and particle removal efficiency in high frequency ultrasound fields, Journal of Applied Physics, 112(11). Archived versionFinal publisher's version / pdf Influence of surface tension on cavitation noise spectra and particle removal efficiency in high frequency ultrasound fields Physical cleaning methods are applied in the semiconductor industry and have become increasingly challenging due to the continued scaling of semiconductors device elements. Cavitation and acoustic phenomena are known to play a fundamental role in megasonic cleaning. Hence, a better understanding of cavitation phenomena in multi-bubble systems is crucial. Here, a study on the effects of lower bulk surface tension and different O 2 concentrations on the bubble activity in the megahertz range is presented. A lower bulk surface tension (45 mN/m) with respect to ultra pure water (72 mN/m) is obtained by adding a non-ionic surface-active agent (Triton X-100). After a thorough surfactant characterization, a Triton X-100-containing cleaning solution is investigated under pulsed and continuous acoustic fields, for different acoustic amplitudes and gas concentrations. It is demonstrated that cavitation activity, measured by means of ultraharmonic cavitation noise, is enhanced in presence of a lower surface tension, under continuous acoustic fields. In addition, cavitation measurements performed under pulsed fields reveal the existence of optimal pulse-off times, for which a maximum of activity is observed. These optimal pulse-off time values are linked to the bubble dissolution theoretical times and experimentally verified. To end, cavitation noise measurements are correlated to cleaning performance in megasonic fields by means of particle removal and damage tests on patterned wafers. A clear increase in particle removal efficiency of 78 nm SiO 2 particles is obtained when Triton X-100 is employed, at the optimized process conditions. In addition, the number of defects due to cavitation bubbles is significantly reduced for lower surface tension, at particle removal efficiencies <60%. The results here reported constitute a different approach towards more efficient megasonic cleaning processes.

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Section: Particle Removal Efficiency (Pre)mentioning

confidence: 99%

Influence of surface tension on cavitation noise spectra and particle removal efficiency in high frequency ultrasound fields

Camerotto

Brems

Hauptmann

et al. 2012

Journal of Applied Physics

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“…200 mm Si(100) wafers doped with boron (1 × 10 16 atoms/cm 3 ) are used to investigate the O deposition on H-terminated Si(100). The wafers undergo a standard clean [27] followed by an HF dip in a 2% HF/H 2 O solution for 30 s to remove the native oxide and metal contaminations. After wet processing, the wafers are loaded into the load ports of the cluster.…”

Section: Methodsmentioning

confidence: 99%

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Jayachandran

Delabie

Billen

et al. 2015

Applied Surface Science

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“…These studies included Marc Heyns ͑Fig. 27͒, [360][361][362] Journal of The Electrochemical Society, 149 ͑5͒ S35-S58 ͑2002͒ S49 extensive monograph summarizing a number of cleaning technology and surface preparation processes and their relation to enhanced device performance. 368 The preparation of the silicon surface, cleaning, passivation, and surface morphology, has played a significant role in ensuring the development of improved device performance and yield.…”

Section: Surfaces and Wafer Cleaningmentioning

confidence: 99%

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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Implementation of the IMEC-Clean in advanced CMOS manufacturing

Cited by 20 publications

References 1 publication

Influence of surface tension on cavitation noise spectra and particle removal efficiency in high frequency ultrasound fields

Influence of surface tension on cavitation noise spectra and particle removal efficiency in high frequency ultrasound fields

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

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