Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization

Yadav, Dharmendra Singh; Sharma, Dheeraj; Raad, Bhagwan Ram; Bajaj, Varun

doi:10.1016/j.spmi.2016.04.027

Cited by 50 publications

(15 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, the fundamental theoretical limit of the subthreshold swing (SS), which is about 60 mV/dec at room temperature for conventional MOSFETs, does not permit further decrease of the leakage current in these devices. Therefore alternative device structures and materials are proposed to overcome these problems [1][2][3][4][5][6][7]. They could offer a subthreshold swing (SS) smaller than 60 mV/dec [2].…”

Section: Introductionmentioning

confidence: 99%

“…They belong to group IV of the periodic table. Graphene is comprised of sp 2 hybridized carbon atoms and planar configuration whereas silicene and germanene because to the mixing of sp 2 and sp 3 hybridization have low-buckled structure [10][11][12][13][14][15][16][17][18]. Various studies show that graphene, germanene and silicene monolayers have zero bandgap.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

Samipour

Dideban

Heidari

2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In this article, the effects of hetero-dielectric gate material and gate-drain underlap on the ambipolar and ON-state current of a germanene nanoribbon (GeNR) tunneling field-effect transistors (TFETs) is examined. The simulations are performed using the combination of density functional theory (DFT) and nonequilibrium Green's function (NEGF) formalis m. It was observed that using high-k dielectric gate material increases the ON-state current while the combination of hetero-dielectric gate material and gate-drain underlap suppresses the ambipolar current and improves the ON-state current. In addition, the effect of various hetero-junctions in the source region on the performance of GeNR-TFET was investigated. Due to the dependency between the width and energy bandgap in GeNR, utilizing a small bandgap in the source improves ON-state current and its ambipolar behavior.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

Samipour

Dideban

Heidari

2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Hence, it can be solved using low bandgap semiconductors [13]. Lately, different methods of improving the performance of TFETs have been presented such as gate engineering [14], using heterostructures and high-k dielectric [15]. TFETs also suffer from ambipolar behavior [16,17], which is concluded from the presence of symmetric areas of P + and N + in the source and the drain, the overlapping between the valence band of the channel, and the conduction band of the drain under negative gate bias.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, it has created a high current drive at the negative voltage similar to the positive voltage. To overcome the ambipolar behavior, researchers have used hetero-gate dielectrics, gate workfunction engineering, asymmetric doping for source and drain [18], Gaussian-doping profiles, and gate-drain overlapping [14,16,17,[19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Representation of heterostructure electrically doped nanoscale tunnel FET with Gaussian-doping profile for high-performance low-power applications

2018

View full text Add to dashboard Cite

In this paper, a gallium antimonide junctionless tunnel field-effect transistor based on electrically doped concept (GaSb-EDTFET) is studied and simulated. The performance of the device is analyzed based on the energy band diagram and electric field profile. The on-current, transconductance, and cutoff frequency are enhanced in case of GaSb-EDTFET compared with Si-EDTFET due to the combination of the high tunneling efficiency of the narrow bandgap and the high-electron mobility of GaSb. On the other hand, the Gaussian-doping profile decreases the ambipolar and off current by increasing the tunneling barrier length at the drain/channel interface. Hence, applying Gaussian-doping profile on GaSb-EDTFET makes it a suitable candidate for analog and digital applications. Next, heterostructure channel/source interface EDTFET is studied which uses GaSb for the source and AlGaSb for the drain and channel regions. Then, it has been optimized by numerical simulation in terms of aluminum (Al) composition. The optimal Al composition was founded to be around 10% (x = 0.1). It is shown that the blend of Gaussian-doping profile and the heterostructure channel/source interface with optimal Al composition remarkably reduces ambipolar current amount to a value of 1.3 × 10 −23 A/μm. The improvements in terms of I off , I on , I on /I off rate, subthreshold swing, transconductance, cutoff frequency, and also suppressed ambipolar behavior are illustrated by numerical simulations.

show abstract

“…The DG-JL TFET design can pave the way to reduce the fabrication cost, but it exhibits degraded electrical FoMs. Several recently published works are focused on improving the multi-gate JL TFET by suggesting design improvements such as gate underlap and overlap, introducing III–V materials and source/drain engineering [ 19 – 24 ]. Additional approaches are in fact required in order to push the limits of the DG-JL TFET performance and achieve energy-efficient and scalable transistors.…”

Section: Introductionmentioning

confidence: 99%

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

Ferhati¹,

Djeffal²,

Bentrcia³

2018

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si1− xGex/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si1− xGex material at the source side on improving the subthreshold behavior of the DG-JL TFET and on suppressing ambipolar conduction is investigated. Moreover, the impact of the Ge mole fraction in the proposed Si1− xGex source region on the electrical figures of merit (FoMs) of the transistor, including the swing factor and the I ON/I OFF ratio is analyzed. It is found that the optimized design with 60 atom % of Ge offers improved switching behavior and enhanced derived current capability at the nanoscale level, with a swing factor of 42 mV/dec and an I ON/I OFF ratio of 115 dB. Further, the scaling capability of the proposed Si1− xGex/Si/Ge DG-HJ-JL TFET structure is investigated and compared to that of a conventional Ge-DG-JL TFET design, where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications.

show abstract

Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization

Cited by 50 publications

References 11 publications

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

First Principles Study of the Ambipolarity in a Germanene Nanoribbon Tunneling Field Effect Transistor

Representation of heterostructure electrically doped nanoscale tunnel FET with Gaussian-doping profile for high-performance low-power applications

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability

Contact Info

Product

Resources

About