Impact on Low-Frequency Noise Properties from Lateral Design of Differentially Grown SiGe HBTs

Sanden, M.; Malm, B. Gunnar; Grahn, Jan; Östling, Mikael

doi:10.1109/essderc.2000.194840

30th European Solid-State Device Research Conference 2000

DOI: 10.1109/essderc.2000.194840

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Impact on Low-Frequency Noise Properties from Lateral Design of Differentially Grown SiGe HBTs

M. Sanden

B. Gunnar Malm²,

Jan Grahn³

et al.

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Cited by 4 publications

(2 citation statements)

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“…Tang et al [12] showed that recombination centres at the interface between the SiGe intrinsic base and the extrinsic polysilicon base were a source of noise and could be passivated by boron. Sandén et al [13] also showed that the dominant noise source varied strongly with the extrinsic base design. In this paper, a study is made of the influence of a novel self-aligned BF implanted link base on noise in SiGe HBTs produced using SEG of the collector in the same growth step as NSEG of the SiGe base and Si cap.…”

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confidence: 99%

“…While noise is generally very low in SiGe heterojunction bipolar transistors (HBTs), there is some evidence to suggest that the link base can be a source of noise if it is not correctly optimized [12], [13]. Tang et al [12] showed that recombination centres at the interface between the SiGe intrinsic base and the extrinsic polysilicon base were a source of noise and could be passivated by boron.…”

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confidence: 99%

See 1 more Smart Citation

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

Lukyanchikova

Garbar

Petrichuk

et al. 2001

IEEE Trans. Electron Devices

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A study is made of 1 noise in SiGe heterojunction bipolar transistors (HBTs) fabricated using selective growth (SEG) of the Si collector and nonselective growth (NSEG) of the SiGe base and Si emitter cap. The transistors incorporate a self-aligned link base formed by BF 2 implantation into the field oxide below the p + polysilicon extrinsic base. The influence of this BF 2 implant on the 1 noise is compared with that of a F implant into the polysilicon emitter. Increased base current noise S IB and base current are seen in transistors annealed at 975 C, compared with transistors annealed at 950 or 900 C. At a constant collector current, both the BF 2 and F implants reduce S IB , whereas at a constant base current, only the BF 2 implant reduces S IB. This result indicates that the BF 2 implant decreases the intensity of the base current noise source whereas the F implant decreases the base current. The proposed explanation for the increased 1 noise is degradation of the surface oxide by viscous flow at 975 C under the influence of stress introduced during selective Si epitaxy. The influence of the BF 2 implant on the noise is explained by the relief of the stress and hence the prevention of viscous oxide flow.

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mentioning

confidence: 99%

mentioning

confidence: 99%

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

Lukyanchikova

Garbar

Petrichuk

et al. 2001

IEEE Trans. Electron Devices

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show abstract

Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions

Hoque

Çelik‐Butler

Martin

et al. 2006

Solid-State Electronics

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Has SiGe lowered the noise in transistors?

Chroboczek

Ghibaudo²

2002

IEE Proceedings - Circuits, Devices and Systems

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Impact on Low-Frequency Noise Properties from Lateral Design of Differentially Grown SiGe HBTs

Cited by 4 publications

References 5 publications

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

The influence of BF/sub 2/ and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base

Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions

Has SiGe lowered the noise in transistors?

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