Has SiGe lowered the noise in transistors?

Chroboczek, J. A.; Ghibaudo, G.

doi:10.1049/ip-cds:20020320

Cited by 6 publications

(5 citation statements)

References 30 publications

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“…The fact that wide 1/f spectra have been observed with MOSFETs where the oxide layer is between 10 and 20 Å [27,28] seems a strong argument against the McWhorter model. However, one should consider quantization effects, which shift the peak in the carrier concentration away from the interface/the average trap distance remains 20-30 ( A: So that the tunneling distance still permits the wide range of tvalues [29,30].…”

Section: S / 1=fmentioning

confidence: 99%

On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs

Vandamme

Hooge

2005

Physica B: Condensed Matter

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Section: S / 1=fmentioning

confidence: 99%

On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs

Vandamme

Hooge

2005

Physica B: Condensed Matter

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“…Therefore, it was anticipated that not only the drive current would be significantly improved but also the LF noise. 69,70 Some noise studies confirmed this idea, [69][70][71] although later experimental and modeling work has demonstrated that for optimal noise performance, the process parameters ͑e.g., Ge fraction and cap layer thickness͒ must be carefully fine-tuned. 70,[72][73][74] This is illustrated by Fig.…”

Section: Impact Of the Silicon Substrate Parameters On The Lf Noisementioning

confidence: 95%

“…69,70 Some noise studies confirmed this idea, [69][70][71] although later experimental and modeling work has demonstrated that for optimal noise performance, the process parameters ͑e.g., Ge fraction and cap layer thickness͒ must be carefully fine-tuned. 70,[72][73][74] This is illustrated by Fig. 11, showing the calculated normalized current noise spectral density (S I /I D 2 ) as a function of the Ge fraction ͑Fig.…”

Section: Impact Of the Silicon Substrate Parameters On The Lf Noisementioning

confidence: 95%

“…27,68 Recently, substantial efforts have been devoted to the development of p-MOSFETs on strained SiGe. 69,70 The strain built in the thin SiGe epitaxial layer causes an increase of the hole mobility in the channel direction, which greatly improves the drive current, bringing it closer to the n-MOSFET performance. In addition, the SiGe channel is offset from the Si-SiO 2 interface by an epitaxial silicon cap layer.…”

Section: Impact Of the Silicon Substrate Parameters On The Lf Noisementioning

confidence: 99%

“…11b͒. 70 Clearly, the functions are nonmonotonic. Moreover, minimizing the noise may not be fully compatible with boosting the current drive performance of the SiGe p-MOSFETs.…”

Section: Impact Of the Silicon Substrate Parameters On The Lf Noisementioning

confidence: 99%

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Low-Frequency Noise Assessment for Deep Submicrometer CMOS Technology Nodes

Claeys

Mercha

Simoen

2004

J. Electrochem. Soc.

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This overview focuses on the different types of noise occurring in deep submicrometer silicon metal oxide semiconductor field-effect transistors and their use as an analytical tool. The noise sources comprise white noise, generation-recombination noise, random telegraph signal fluctuations, and 1/f or flicker noise. The fundamental basis of each noise type is briefly described and illustrated by some practical examples. In a second part, the impact of the properties of the silicon substrate (orientation, crystallization technique, silicon-on-insulator, SiGe) on the noise performance is discussed. Finally, the influence on the low-frequency noise behavior of different advanced process modules, such as gate stack, device isolation, silicidation, and gate engineering, is illustrated. © 2004 The Electrochemical Society. All rights reserved.

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