Impact on film bulk acoustic resonator tempco and quality factor from boron doped SiO&lt;inf&gt;2&lt;/inf&gt; temperature compensation material

Zou, Qiang; Small, Martha; Lee, D.; Bi, Frank; Snyder, Rodney; Lamers, Tina L.; Choy, Jennifer T.; Ruby, R.

doi:10.1109/transducers.2013.6627037

Cited by 3 publications

(4 citation statements)

References 6 publications

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“…Putting SiO 2 at the high stress region of BAW is an excellent method, thus a minimum amount of SiO 2 is used without large k eff 2 reduction and Q-values loss [ 95 ]. Furthermore, a higher positive temperature compensation can be operated by using boron doped SiO 2 or SiOF as the temperature compensation layer [ 98 ]. Tokihiro Nishihara et al [ 99 ] studied three structures of TC-FBAR with SiOF layer ( Figure 15 a).…”

Section: Temperature Compensationmentioning

confidence: 99%

“…Compared with FBAR, SMR-BAW shows a huge potential in temperature compensation when using a positive material as the low impedance layer. According to the research [ 98 ], as the number of Bragg reflection layers increases, the TCF becomes smaller. In addition, increasing the thickness of the first SiO 2 layer below the piezoelectric film ( d 1 ) can also decrease TCF.…”

Section: Temperature Compensationmentioning

confidence: 99%

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Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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With the rapid commercialization of fifth generation (5G) technology in the world, the market demand for radio frequency (RF) filters continues to grow. Acoustic wave technology has been attracting great attention as one of the effective solutions for achieving high-performance RF filter operations while offering low cost and small device size. Compared with surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators have more potential in fabricating high- quality RF filters because of their lower insertion loss and better selectivity in the middle and high frequency bands above 2.5 GHz. Here, we provide a comprehensive review about BAW resonator researches, including materials, structure designs, and characteristics. The basic principles and details of recently proposed BAW resonators are carefully investigated. The materials of poly-crystalline aluminum nitride (AlN), single crystal AlN, doped AlN, and electrode are also analyzed and compared. Common approaches to enhance the performance of BAW resonators, suppression of spurious mode, low temperature sensitivity, and tuning ability are introduced with discussions and suggestions for further improvement. Finally, by looking into the challenges of high frequency, wide bandwidth, miniaturization, and high power level, we provide clues to specific materials, structure designs, and RF integration technologies for BAW resonators.

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Section: Temperature Compensationmentioning

confidence: 99%

Section: Temperature Compensationmentioning

confidence: 99%

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

et al. 2020

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“…In 2011, Matsuda et al [30] studied the TCE of SiOF films, and found that the TCF of SAW devices increased with the fluorine content. In 2013, Zou et al [31] found that FBAR with boron-doped silica exhibited a high positive TCF and effective electromechanical coupling coefficient (Kt 2 ), and the value of TCF is related to the concentration of boron. By doping different PH 3 flow rate, the TCE and thermal expansion coefficient of SiO 2 material might be modulated, and the TCF of device would change accordingly.…”

Section: Mag(z 11 )mentioning

confidence: 99%

The research of dual-mode film bulk acoustic resonator for enhancing temperature sensitivity

Zhao¹,

Xing²,

Han³

et al. 2021

Semicond. Sci. Technol.

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A dual-mode film bulk acoustic resonator (DM-FBAR) temperature sensor modulated by different phosphorous-doped silica insertion layers was reported in this paper. The relative drift of the second and third resonance peaks of FBAR could improve the temperature sensitivity through the dual-mode beat frequency calculation method. The temperature sensitivity can be regulated by different the PH 3 doping flow in the SiO 2 insertion layer. Among the fabricated devices, FBAR with a SiO 2 insertion layer doped 4 sccm PH 3 has the highest temperature sensitivity of 64.8 kHz • C −1 . It is discovered that the greater the Young's modulus of the insert film changes with temperature, the higher the temperature sensitivity of DM-FBAR device. Therefore, an important technical means to improve the performance of DM-FBAR devices is using the material whose Young's modulus is more sensitive to temperature in the future.

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“…After doping fluorine in SiO 2 as the temperature-compensated layer, the electromechanical coupling coefficient (k 2 t ) can be increased to 6.26%, and a TCF of −11.1 ppm/ • C can be achieved [22]. Meanwhile, after doping boron in SiO 2 as the temperature-compensated layer, a TCF of up to −1.5 ppm/ • C was obtained with an improved quality factor (Q) value [23]. Thus, the doped SiO 2 temperature-compensated layer is suitable for the production of broadband filters.…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Temperature-Compensated Film Bulk Acoustic Resonator Filter Based on the Stress Compensation Effect

Liu

Sun

et al. 2022

Coatings

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To ensure that the performance of filters matches the continuous development in communication frequency bands, the influence of temperature on filter performance must be considered during the fabrication of filters. In this study, a cavity-type temperature-compensated film bulk acoustic resonator (TC-FBAR) device was prepared with an SiO2 temperature filter between the bottom electrode and the piezoelectric layer. A one-dimensional Mason model of the TC-FBAR was established. An advanced design system, a high-frequency structure simulator, and COMSOL software were used to optimize the design of the TC-FBAR. After the optimization, the out-of-band rejection was improved by 10 dB. To address the compensation effect of the tensile and compressive stresses, a multilayer film was implemented for low-stress control and a reduction in stress to |P| ≤ 150 MPa, thereby improving the orientation of the piezoelectric film. Moreover, the influence of the thickness of the SiO2 temperature-compensated layers on the temperature-compensated characteristics was studied. When the SiO2 thickness was 50 nm, the temperature coefficient of frequency (TCF) was ±1 ppm/°C. The center frequency and 3 dB bandwidth of TC-FBAR were 2.492 GHz and 15.02 MHz, respectively, and the center insertion loss was −3.1 dB. Moreover, the out-of-band rejection was greater than 40 dBc, and TCF was 0.8 ppm/°C.

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Impact on film bulk acoustic resonator tempco and quality factor from boron doped SiO<inf>2</inf> temperature compensation material

Cited by 3 publications

References 6 publications

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

Materials, Design, and Characteristics of Bulk Acoustic Wave Resonator: A Review

The research of dual-mode film bulk acoustic resonator for enhancing temperature sensitivity

Design and Fabrication of Temperature-Compensated Film Bulk Acoustic Resonator Filter Based on the Stress Compensation Effect

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