Impact of Total Ionizing Dose on the Analog Single Event Transient Sensitivity of a Linear Bipolar Integrated Circuit

Abstract

International audienceTotal ionizing dose (TID) strongly affects the single event transient (SET) sensitivity of a bipolar linear voltage comparator (LM139). The general rule that transistors in the non-conducting state are the most sensitive to SETs was verified, with some exceptions. The mechanisms responsible for those exceptions were identified and explained using circuit analysis. In the non typical behavior, a correlation of the degradation of the amplifier stages with the shape of the transient output signal was established. Following total dose exposure the SETs generally exhibit a reduction in amplitude due to the degradation of the slew rate. However, in some cases the transient signal is amplified because degradation of either the current source or of the current gain of some transistors forces the output transistor to the edge of conduction, so that it behaves like a voltage amplifier and amplifies the parasitic transient signal. Laser testing demonstrates that ASET sensitivity also is affected by TID degradation of transistors that are not directly hit by the laser

SPICE Simulations of Single Event Transients in Bipolar Analog Integrated Circuits Using Public Information and Free Open Source Tools

“…10, we can see how two kinds of transients originating in different transistors change from pristine devices to those with only 15% of the initial β F value. This behavior is in concordance with the results reported in [46]. An interesting effect shown by simulations and to be verified in experiments is the increasing delay between the injection of charge and the output transient, which we attribute to the degradation of the current source biasing the output stage.…”

“…There are also works investigating the effects of accumulated damage on the SETs in voltage comparators. SPICE simulations showed identical behavior to that reported by other authors [46]. In Fig.…”

“…However, a phenomenon that does not appear with the decrease of β F is the shift of the LOW logic output value from 0 V up to 1-2 V [46]. SPICE simulations show that it takes place when either IKF decreases or the collector parasitic resistor, RC, grows, phenomena also expected due to the accumulated radiation damage.…”

The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the L>M124 Operational Amplifier

“…The first demonstration that TID does, in fact, alter the shapes of SETs in linear bipolar circuits involved the LM139 voltage comparator [1]. SETs were generated by focusing pulsed laser light onto sensitive circuit nodes, consisting of bipolar transistors, and monitoring the output with an oscilloscope.…”

Load resistor as a worst-case parameter to investigate single-event transients in analog electronic devices

“…A lot of factors affect the shape of these transients: The kind and energy of the ion, the sort of technology, the feedback network, the input values, etc [2][3][4][5][6][7][8][9][10][11]. Load effects have been studied in several structures although attention is usually paid on capacitive loads putting aside other kinds such as load or pull-up resistors.…”