Impact of silicon surface characteristics on MOS device yield for ULSI

Heyns, Marc; Hasenack, C. M.; Keersmaecker, R. De; Falster, R.

doi:10.1016/0167-9317(91)90025-9

Cited by 22 publications

(2 citation statements)

References 32 publications

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“…The importance of surface roughness on breakdown properties of thermal grown oxide layers has been previously demon- strated [12], [13]. Our previous report [10] also indicated the etching rate should show the positive relationship with the surface roughness of poly-Si film.…”

Section: A the Effect Of Cleaning Solutions On Surface Roughnessmentioning

confidence: 93%

Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Pan

Lei

et al. 2001

IEEE Trans. Semicond. Manufact.

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Abstract-In this study, various cleaning solutions containing chelating agents with carboxyl acid group ( COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical property for the capacitor.

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Section: A the Effect Of Cleaning Solutions On Surface Roughnessmentioning

confidence: 93%

Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Pan

Lei

et al. 2001

IEEE Trans. Semicond. Manufact.

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“…As etapas de limpeza química de superfícies de metais e semicondutores são de fundamental importância na fabricação de células solares MOS de alta eficiência (CHEN, 2002;SANTOS, 1996). É importante conhecer e controlar a evolução das superfícies de silício ao longo das diversas etapas de limpeza e de processamento sob o ponto de vista tanto de contaminação metálica superficial como também de terminação superficial (sítios, ligações químicas e rugosidade) (KERN, 1970;1990;1991;HEYNS, 1991;. A contaminação metálica superficial não devidamente removida das lâminas de silício contribui para, na maioria dos casos, deteriorar o rendimento de fabricação dos óxidos ultrafinos .…”

Section: 05unclassified

Fabricação de células solares MOS utilizando oxinitretos de silício obtidos por processamento térmico rápido (RTP).

Christiano¹

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A survey of non‐destructive surface characterization methods used to insure reliable gate oxide fabrication for silicon IC devices

Diebold¹,

Doris²

1993

Surface & Interface Analysis

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AAs device dimensions decrease below 500 nm, transistors require a gate oxide thickness of < 10 nm. Trace organic and inorganic contamination and surface roughness must be minimized before thermal growth of the SiO, gate oxide. Both structural defects and contamination can impact device reliability. A variety of diagnostic methods are presently used to either analyze the effectiveness of water cleaning processes or dectrically test gate dielectrics after processing. Owing to device dimensions, characterization of surface contamination levels is more readily done using unpatterned 'monitor' wafers. We discuss automated, non-destructive 'in FAB' analysis using total reflection x-ray fluorescence, atomic force microscopy and spectroscopic ellipsometry. Total reflection x-ray fluorescence is already a well-established 'in FAB' technique, and atomic force microscopy and variable-angle spectroscopic ellip someter systems designed for 'in FAB' use are commercially available at the time of submission of this article. Other FAB-compatible optical characterization methods are c;escribed and contrasted. Microroughness analysis development activities are also described.

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Impact of silicon surface characteristics on MOS device yield for ULSI

Cited by 22 publications

References 32 publications

Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Comparison of novel cleaning solutions with various chelating agents for post-CMP cleaning on poly-Si film

Fabricação de células solares MOS utilizando oxinitretos de silício obtidos por processamento térmico rápido (RTP).

A survey of non‐destructive surface characterization methods used to insure reliable gate oxide fabrication for silicon IC devices

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