Impact of Self-heating on Performance and Reliability in FinFET and GAAFET Designs

Recent Progress in Physics-Based Modeling of Electromigration in Integrated Circuit Interconnects

“…In the most previous studies of EM modeling, the Black's equation and Blech limit are applied to analyze the reliability of signal interconnects and power grids [66][67][68][69][70][71][72][73]. In [66][67][68], by incorporating the Joule heating effect, Gracieli Posser et al have developed approaches for modeling and efficient characterization of cell-internal EM and have simulated EM effects on different metal layers at different wire lengths.…”

“…Meanwhile, they presented a fast and stochastic analysis methodology to overcome the lifetime under-estimation by conventional methodologies based on weakest-link assumption for EM assessment of click grids and power grids [71,72]. Vidya et al also applied Black's equation and Blech limit to estimate the self-heating impact on EM reliability of FinFET and GAAFET designs [73]. In order to overcome the reliability under-estimation due to the traditional series model for EM checking and the pessimistic assumptions about the chip workload and the corresponding supply currents, Mohammad Fawaz and Sandeep Chatterjee et al proposed a framework for EM checking that allows users to specify conditions-of-use type constraints which help capture realistic chip workload and which includes the use of a novel mesh model for EM prediction in the grid, instead of the traditional series model [74][75][76].…”

Electromigration-Aware Interconnect Design

“…The high transistor density results in high heat flux, and inefficient heat-removal paths to the thermal ambient. The thermal conductivity in the confined region of the fin is degraded due to lattice vibrations (phonons), and the addition of buried oxide (BOX) in SOI FinFETs, or the oxide that surrounds nanowires in gate all-around FETs (GAAFETs), further degrades the thermal conduction path [8].…”

“…In [8], thermal analysis is performed on a set of benchmark circuits. Temperature distributions from thermal analysis are used to estimate the impact on EM using Black's law, and the percentage EM lifetime degradation due to SH is shown in Fig.…”

Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design

“…[24][25][26] For these reasons, it is well-known fact that GAA structure is inferior to FinFET structure in terms of heat dissipation, namely SHE. 27,28) Given that the effective hole mobility decreases as the lattice temperature of the channel increases due to SHE, 29) conventional Ge vertically stacked GAA NW pMOSFET is difficult to fully utilize both advantages of the high intrinsic hole mobility from Ge and the high I on from its vertically stacked channel structure. In addition, this SHE also causes lots of reliability issues such as metallization lifetimes of the circuit, 30) hot-carrier induced degradation, 31) negative-bias temperature instability, 32) and decrease of threshold voltage (V TH ) as well.…”