Improvement of self-heating effect in Ge vertically stacked GAA nanowire pMOSFET by utilizing Al2O3 for high-performance logic device and electrical/thermal co-design
Abstract:For improving self-heating effect (SHE) in Ge vertically stacked gate-all-around (GAA) nanowire (NW) p-type metal-oxide-semiconductor field-effect transistor (pMOSFET), aluminum oxide (Al2O3, alumina) is utilized for gate dielectric layer. From the high thermal conductivity of Al2O3, SHE is significantly improved. In order to validate the proposed device structure, technology computer-aided design simulation is performed through Synopsys Sentaurus three-dimensional tool. As a result, when Al2O3 is incorporated… Show more
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