Impact of reactor- and transistor-type on electron shading effects

Creusen, M.; Ackaert, J.; Backer, E. De; Groeseneken, G.

doi:10.1109/ppid.1999.798796

Cited by 5 publications

(4 citation statements)

References 6 publications

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“…This is also consistent with literature reports that charging impacts are more significant on pMOS than on nMOS devices [13], [19]- [21]. Although electron shading effect [22] is a well-known cause for the plasma damage susceptibility of pMOS antenna devices, because the shaded electrons lead to positive stressing of the gate dielectric, which corresponds to carrier accumulation of pMOS devices [20], [21]. However, in this work, electron shading effect is ruled out, since our antenna devices are with low aspect ratio and no dense-line antenna is used (i.e., area-intensive antenna only).…”

Section: ) Gate Leakage Current Measurementssupporting

confidence: 91%

Plasma-induced charging damage in ultrathin (3-nm) gate oxides

Chen

Lin

Chang

et al. 2000

IEEE Trans. Electron Devices

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Abstract-Plasma-induced damage in various 3-nm-thick gate oxides (i.e., pure oxides and N 2 O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Both charge-to-breakdown and gate leakage current measurements indicated that large leakage current occurs at the wafer center as well as the wafer edge for pMOS devices, while only at the wafer center for nMOS devices. These interesting observations could be explained by the strong polarity dependence of ultra-thin oxides in charge-to-breakdown measurements of nMOS devices. In addition, pMOS devices were found to be more susceptible to charging damage, which can be attributed to the intrinsic polarity dependence in tunneling current between n-and p-MOSFET,s. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage can be significantly suppressed in N 2 O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided oxides were also found to be more robust when subjected to high temperature stressing. Therefore, nitrided oxides appear to be very promising for reducing plasma charging damage in future ULSI technologies employing ultrathin gate oxides.Index Terms-Dielectric breakdown, leakage current, nitrogen, plasma applications, semiconductor device reliability.

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Section: ) Gate Leakage Current Measurementssupporting

confidence: 91%

Plasma-induced charging damage in ultrathin (3-nm) gate oxides

Chen

Lin

Chang

et al. 2000

IEEE Trans. Electron Devices

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“…PMOS are then brought into the accumulation mode, whereas NMOS are depleted, and a part of the gate voltage is lost in the depletion zone, reducing the electric field in the NMOS gate oxide [4]. On the other hand, it is increased in the PMOS, where injected carriers through the gate oxide have a higher energy.…”

Section: Pmos Behaviormentioning

confidence: 99%

Ultra-Thin Gate Oxide (1.6 nm): New Mechanisms of Plasma Induced Damage and Oxidation Process Optimisation

Carrere

Bidaud

Guyader

et al. 2000

30th European Solid-State Device Research Conference

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We have studied oxide etch charging effects on gate oxides thinner than 2nm. On NMOS devices, charging degradation disappears on the thinnest gate oxides, whereas for PMOS, an increased level of damage is observed. This is explained by both a positive charging polarity and a higher interface states density in the thinnest PMOS gate oxide. A new dedicated test structure is presented and it is shown that plasma induced damage can be reduced in ultra-thin gate oxides, by optimisation of the gate oxidation process steps.

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“…In this case the plasma damage can be caused by the etching of the metal pattern or/and the oxide deposition by a high density plasma process. Plasma damage during metal etching is YpicaUy driven by electron shading and as such influenced by the spacing between the fingers of the antenna [14]- [17]. Since no impact is observed of the spacing between the fingers, it is more likely that the HC degradation is caused hy the HDP oxide deposition.…”

Section: Resultsmentioning

confidence: 99%