Impact of Random Telegraph Signal in CMOS Image Sensors for Low-Light Levels

Leyris, C.; Mart́ınez, F.; Valenza, M.; Hoffmann, A.; Vildeuil, J.C.; Roy, F.

doi:10.1109/esscir.2006.307609

Cited by 56 publications

(28 citation statements)

References 13 publications

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“…Taking the difference of the two samples eliminates the kTC noise, as well as some sources of fixed pattern noise. The remaining noise is due to readout noise, which can be thermal, 1/f or random telegraph signal (RTS) noise, and typically gives a noise value of the order of 200-300 μV, depending on the characteristics of the sensor [8]. The dominant of these noise sources is the RTS noise associated with single traps at the gate-oxide interface of the in-pixel source follower transistor, which can be reduced by careful geometric tailoring or via the use of special processing steps [9].…”

Section: B the 4t Pixel Architecturementioning

confidence: 99%

A low noise pixel architecture for scientific CMOS monolithic active pixel sensors

Coath

Crooks

Godbeer

et al. 2009

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)

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This paper presents the design and characterisation of FORTIS (4T Test Image Sensor), which is a low noise, CMOS monolithic active pixel sensor for scientific applications. The pixels present in FORTIS are based around the four transistor (4T) pixel architecture, which is already widely used in the commercial imaging community. The sensor design contains thirteen different variants of the 4T pixel architecture to investigate the effects of changing its core parameters. The variants include differences in the pixel pitch, the diode size, the in-pixel source follower, and the capacitance of the floating diffusion node (the input node of the in-pixel source follower). Processing variations have also been studied, which include varying the resistivity of the epitaxial layer and investigating the effects of a special deep pwell layer. By varying these parameters, the 4T pixel architecture can be optimised for scientific applications where detection of small amounts of charge is required.

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Section: B the 4t Pixel Architecturementioning

confidence: 99%

A low noise pixel architecture for scientific CMOS monolithic active pixel sensors

Coath

Crooks

Godbeer

et al. 2009

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)

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“…The present trend shows that thermal and 1/f noise are no longer the main contributing noise components. As a matter of fact, the main LFN contributing factor in down scaled MOSFETs is Random Telegraph Signal (RTS) noise [3], [4]. All these noise phenomena, which may show up in circuit measurement, are not currently incorporated in any circuit simulator.…”

Section: Introductionmentioning

confidence: 99%

Random telegraph signal noise SPICE modeling for circuit simulators

Leyris

Pilorget

Marin

et al. 2007

ESSDERC 2007 - 37th European Solid State Device Research Conference

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In small area MOSFET devices widely used in analog and RF circuit design, low frequency noise behavior is increasingly dominated by Random Telegraph Signal noise. For analog circuit designers, awareness of these single electron noise phenomena is crucial. If optimal circuits are to be designed these effects can aid in low noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied. This paper presents the investigation of Random Telegraph Signal (RTS) implementation in circuit simulator. A model based on Shockley-Read-Hall statistics to explain the behavior is presented. This work takes into account the impact of noise power spectral density (PSD) dispersion. The distinctiveness of the noise variations is discussed in detail and the proposed mechanisms behind the phenomena are viewed in light of the collected data. Results are compared with experimental data.

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“…The low frequency noise in small MOSFET devices for analog and digital applications is reported to be dominated by drain current random telegraph noise (I d RTN) [1][2][3]. I d RTN which is responsible for time dependence of I d fluctuation takes a crucial role in the current transport of such small devices.…”

Section: Introductionmentioning

confidence: 99%