Impact of mechanical stress engineering on flicker noise characteristics

Maeda, S.; Jin, Yong Su; Choi, Jung Kyu; Oh, Seung-Hoon; Lee, Hyun–Woo; Yoo, Jae-Yoon; Sun, Min-Chul; Ku, Ja-Hum; Lee, Kwon; Bae, Su-Gon; Kang, Seongwon; Yang, Jeong-Hwan; Kim, Young-Wug; Suh, Kyung Soo

doi:10.1109/vlsit.2004.1345417

Cited by 22 publications

(5 citation statements)

References 3 publications

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“…Regarding other potential reasons responsible for the worse LFN in strained pMOSFET, like stress induced excess traps or dipoles proposed by Maeda et al, 7) they cannot be justified due to a contraction with the measured gate leakage currents J g in which the strain pMOSFET presents a lower J g than control pMOSFET, shown in Fig. 3.…”

Section: Local Strain Engineering Effect On Lfn In Pmosfetsmentioning

confidence: 86%

“…There exist a lot of controversies in the experimental results and proposed mechanisms on this topic. [6][7][8][9] Maeda et al reported flicker noise increases in pchannel metal-oxide-semiconductor field effect semiconductors (pMOSFET) under both compressive and tensile stress, namely bi-directional noise degradation. 7) Stress induced excess traps and dipoles were assumed responsible for flicker noise degradation.…”

Section: Introductionmentioning

confidence: 99%

“…[6][7][8][9] Maeda et al reported flicker noise increases in pchannel metal-oxide-semiconductor field effect semiconductors (pMOSFET) under both compressive and tensile stress, namely bi-directional noise degradation. 7) Stress induced excess traps and dipoles were assumed responsible for flicker noise degradation. Guisi et al also concluded that SiGe recess source/drain (S/D) regions give rise to a significant enhancement of the trap density in the SiO 2 / HfO 2 gate stack.…”

Section: Introductionmentioning

confidence: 99%

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The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal–Oxide–Semiconductor Field Effect Transistors under Dynamic Body Biases

Yeh

Guo³

2010

Jpn. J. Appl. Phys.

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The impact of local strain on low frequency noise (LFN) in p-channel metal-oxide-semiconductor field effect transistor (pMOSFET) is investigated under dynamic body biases. For 60 nm pMOSFET, the uni-axial compressive strain from embedded SiGe (e-SiGe) in source/drain can contribute 75% effective mobility ( eff ) enhancement and the proportional improvement in current (I DS ) as well as transconductance (G m ). However, the strained pMOSFET suffer more than 80% higher LFN (S ID =I D 2 ) compared with the control pMOSFET free from strain engineering. The measured LFN can be consistently explained by mobility fluctuation model and the increase of Hooge parameter ( H ) appears as a key factor responsible for the higher LFN in strained pMOSFET. Forward body biases (FBB) is proposed as an effective method adapted to nanoscale devices for improving eff and suppressing LFN, without resort to strain engineering. #

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Section: Local Strain Engineering Effect On Lfn In Pmosfetsmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal–Oxide–Semiconductor Field Effect Transistors under Dynamic Body Biases

Yeh

Guo³

2010

Jpn. J. Appl. Phys.

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“…It is also strongly believed that the enhancement of the LF noise that is reported by other groups [6], [7], [9] is mainly related to processinginduced degradation of the gate oxide and not to a fundamental strain mechanism. In order to verify the existence of such an effect, it is recommended to perform LF-noise measurements as a function of external mechanical stress on the same device.…”

Section: Methodsmentioning

confidence: 93%

“…In most cases, it has been reported that strained p-channel transistors exhibit a higher LF noise that is often dominated by the 1/f component [6]- [8]. On the contrary, an improvement of the 1/f noise has been demonstrated for compressively strained pMOSFETs by Ueno et al [9], which raises the fundamental question whether there exists an intrinsic stress effect on the 1/f noise [10].…”

Section: Introductionmentioning

confidence: 99%

On the Low-Frequency Noise of pMOSFETs With Embedded SiGe Source/Drain and Fully Silicided Metal Gate

Simoen

Verheyen

Shickova

et al. 2007

IEEE Electron Device Lett.

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The low-frequency noise of silicon pMOSFETs with embedded SiGe source/drain (S/D) regions is studied. The gate stack consists of HfSiON/SiO 2 covered by a fully silicided gate electrode. S/D regions with different Ge content and thickness have been processed. It is shown that, while mobility and drive current are significantly enhanced by this strain-engineering approach, the 1/f noise is little affected, irrespective of the germanium content or thickness of the epitaxial SiGe S/D layers, i.e., the amount of compressive strain in the channel. From this, it is derived that, first of all, the embedded (S/D) processing does not degrade the gate-stack quality and that, second, no evidence of an intrinsic strain effect on the 1/f noise is observed here.Index Terms-Embedded source and drain regions, SiGe epitaxy, strain engineering, 1/f noise.

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Nanometer CMOS Technology

Goll

Zimmermann

2014

Springer Series in Advanced Microelectronics

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Impact of mechanical stress engineering on flicker noise characteristics

Cited by 22 publications

References 3 publications

The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal–Oxide–Semiconductor Field Effect Transistors under Dynamic Body Biases

The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal–Oxide–Semiconductor Field Effect Transistors under Dynamic Body Biases

On the Low-Frequency Noise of pMOSFETs With Embedded SiGe Source/Drain and Fully Silicided Metal Gate

Nanometer CMOS Technology

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