The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal–Oxide–Semiconductor Field Effect Transistors under Dynamic Body Biases
Abstract:The impact of local strain on low frequency noise (LFN) in p-channel metal-oxide-semiconductor field effect transistor (pMOSFET) is investigated under dynamic body biases. For 60 nm pMOSFET, the uni-axial compressive strain from embedded SiGe (e-SiGe) in source/drain can contribute 75% effective mobility ( eff ) enhancement and the proportional improvement in current (I DS ) as well as transconductance (G m ). However, the strained pMOSFET suffer more than 80% higher LFN (S ID =I D 2 ) compared with the contro… Show more
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