Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films

Weinreich, Wenke; Reiche, R.; Lemberger, M.; Jegert, G.; Müller, Johannes; Wilde, L.; Teichert, S.; Heitmann, Johannes; Erben, Elke; Oberbeck, L.; Schröder, Uwe; Bauer, Anton J.; Ryssel, H.

doi:10.1016/j.mee.2009.03.070

Cited by 65 publications

(40 citation statements)

References 9 publications

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“…6 plotted against √ E. The depth of the defect band of the ZAZ structure lies in the range of 0.5 to 0.8 eV by extrapolating to zero electric field. These are typical values for ZrO 2 , as reported in other publications [5], [6]. The slope m of this plot is given by:…”

Section: Resultssupporting

confidence: 72%

“…Equation (7) is an important indicator to verify the dominant conduction mechanism. In our case (7) is fulfilled for the 7.5 nm more amorphous ZAZ film with the dynamic permittivity extracted from (6). For the 10 nm film stack (6) is fulfilled with the dynamic permittivity value extracted from (6) for a negative potential at the top electrode.…”

Section: Resultsmentioning

confidence: 73%

“…It is important to note that the leakage curves are asymmetric, which is more pronounced for the 10 nm stack than for the 7.5 nm one. XPS measurements on similarly processed samples revealed a thin interface layer between the bottom TiN electrode and the ZrO 2 [6]. This is caused by the usage of the ozone precursor: During the oxide deposition the TiN surface is oxidized and a TiO 2 /TiON interface layer is generated.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Knebel

Schroeder

Zhou

et al. 2014

IEEE Trans. Device Mater. Relib.

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This paper presents the results of I-V and constant-voltage-stress measurements on symmetrical dielectric ZrO 2 /Al 2 O 3 /ZrO 2 film stacks of different thicknesses. The films were grown by atomic layer deposition and structured into cylindrical metal-insulator-metal capacitors. The temperaturedependent leakage characteristics and time-dependent dielectric breakdown behaviors were investigated. A correlation was found between the structural composition, the defect density, and the conduction mechanism.Index Terms-High-k, leakage model, metal-insulator-metal (MIM) capacitor, reliability, ZrO 2 .

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Section: Resultssupporting

confidence: 72%

Section: Resultsmentioning

confidence: 73%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Knebel

Schroeder

Zhou

et al. 2014

IEEE Trans. Device Mater. Relib.

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“…Titaniumnitride is usually implemented in combination with ZrO 2 as dielectric 6 and it was already shown that TiN significantly influences the chemical properties of ZrO 2 thin films. 7 Thus, also an effect of the TiN substrate on the structural properties of ZrO 2 is expected. A second factor is based on the high aspect ratios of the used 3D capacitors in the DRAM devices which can only be deposited uniformly by the help of atomic layer deposition (ALD).…”

Section: Introductionmentioning

confidence: 98%

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

Weinreich

Wilde

Müller

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Thin ZrO2 films are of high interest as high-k material in dynamic random access memory (DRAM), embedded dynamic random access memory, and resistive random access memory as well as for gate oxides. Actually, ZrO2 is predicted to be the key material in future DRAM generations below 20 nm. Profound knowledge of pure and doped ZrO2 thin films, especially of the structural properties, is essential in order to meet the requirements of future devices. This paper gives a detailed overview about the structural properties of ZrO2 films in dependence of various process parameters. The study of atomic layer deposition (ALD) growth mechanisms of ZrO2 on a TiN-substrate in comparison to a Si-substrate covered with native oxide exhibits significant differences. Furthermore, the structural properti es crystallinity, surface roughness, and film stress are studied after the ALD deposition in dependence of the process parameters deposition temperature, layer thickness, and underlying substrate. Remarkable dependencies of the ZrO2 crystallization temperatures on the substrates are figured out. The structural properties after various annealing steps are monitored as well. The influence of doping by SiO2 and Al2O3 is studied, which is primarily used to keep the thin films amorphous during deposition

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“…Indeed, the absence of signal at lower binding energy, which could result from bonds to less electronegative elements than O (e.g., N on oxygen sites) or a depletion of oxygen in ZrO 2 , attests that the film is closed to stoichiometry and that there is no indication of the presence of an interface. 27 The O 1s peaks are shown on Figure 5b. A similar shape of this peak is observed regardless the film thickness, with a binding energy centered at 530 eV.…”

Section: Resultsmentioning

confidence: 99%

ZrO₂Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

Salaün

Veillerot

Ferris

et al. 2014

ECS J. Solid State Sci. Technol.

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In this paper, we report the growth of ZrO 2 thin films on TiN substrates using Plasma Enhanced Atomic Layer Deposition (PEALD) process starting from cyclopentadienyltris(dimetylamino)zirconium and oxygen plasma as precursor and reactant, respectively. The material properties -structure, morphology and composition -are investigated as a function of process parameters such as number of cycles, deposition temperature and plasma conditions. Electrical performances -in terms of breakdown field and leakage currents -are investigated as a function of deposition temperature on Au/ZrO 2 /TiN capacitors, giving an evidence for an impact of the crystallinity and impurities.With the continuous downscaling of integrated circuits (ICs), the replacement of SiO 2 or Si 3 N 4 standard dielectrics by a high κ material, i.e. a material with a higher dielectric constant, has emerged recently. This solution allows for instance keeping large capacitance density with oxide thickness reduction. Among these high κ materials, transition metal oxides such as HfO 2 , ZrO 2 , Ta 2 O 5 and others have been widely proposed and recently reviewed 1 for integration in complementary metal oxide semiconductor (CMOS) devices as well as metal insulator metal (MIM) capacitors, and resistive random access memory (RRAM) applications. 2 For MIM devices, ZrO 2 is preferred for its capacitance density and leakage current, 3 strongly influenced by intrinsic properties such as crystallinity and interface quality. 4 The permittivity of such dielectric depends on its crystalline structure, reaching the value of 47 in the tetragonal phase. 5 In addition, ZrO 2 presents a large bandgap (around 5.5 eV). 6 As a consequence, the main criteria for MIM capacitances, such as low leakage currents, voltage linearity and high breakdown voltage can be achieved. The physical and chemical properties of high κ oxides are also important in oxide based RRAM devices, where the material structure and composition are influent parameters for the switching. 7 In these above ICs applications (RF capacitors, RRAM), from a process integration point of view, the high κ thin films (usually less than 50 nm thick, even less than 10 nm) should be deposited at low temperature (in most cases less than 400 • C) in order to avoid the degradation of the CMOS and metallic lines.Among the various possibilities existing for the growth of high κ thin layers, Atomic Layer Deposition (ALD) is considered as the more appropriated technique because it can produce high quality materials with an excellent control of the thickness, especially for thin films. 8 Various Zr precursors, such as halides, 8 alkyls and alkylamides, 9 β-diketonates 10 and cyclopentadienyl 10,11 have already been investigated for the ALD ZrO 2 growth. The ZrCl 4 / H 2 O combination has been first used in the 180 • -600 • C temperature range 12 and different crystallographic states (with crystalline cubic, monoclinic or tetragonal phases) could be obtained by varying the deposition conditions. 13 However, the presence of chlorine c...

show abstract

Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films

Cited by 65 publications

References 9 publications

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

ZrO₂Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

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Impact of interface variations on J–V and C–V polarity asymmetry of MIM capacitors with amorphous and crystalline Zr(1−)Al O2 films

Cited by 65 publications

References 9 publications

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Conduction Mechanisms and Breakdown Characteristics of $\hbox{Al}_{2}\hbox{O}_{3}$-Doped $\hbox{ZrO}_{2}$ High-$k$ Dielectrics for Three-Dimensional Stacked Metal–Insulator–Metal Capacitors

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

ZrO2Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

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ZrO₂Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium