Structural incommensurate modulation rule in hexagonal Ba(Ti1-xMx)O3-δ (M = Mn, Fe) multiferroics AIP Advances 2, 042129 (2012) Water assisted gate induced temporal surface charge distribution probed by electrostatic force microscopy J. Appl. Phys. 112, 084329 (2012) Influence of target composition and deposition temperature on the domain structure of BiFeO3 thin films AIP Advances 2, 042104 (2012) Nanodomain structures formation during polarization reversal in uniform electric field in strontium barium niobate single crystals J. Appl. Phys. 112, 064117 (2012) The effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode J. Appl. Phys. 112, 064116 (2012) Additional information on J. Appl. Phys. Structural and electrical evidence for a ferroelectric phase in yttrium doped hafnium oxide thin films is presented. A doping series ranging from 2.3 to 12.3 mol% YO 1.5 in HfO 2 was deposited by a thermal atomic layer deposition process. Grazing incidence X-ray diffraction of the 10 nm thick films revealed an orthorhombic phase close to the stability region of the cubic phase. The potential ferroelectricity of this orthorhombic phase was confirmed by polarization hysteresis measurements on titanium nitride based metal-insulator-metal capacitors. For 5.2 mol% YO 1.5 admixture the remanent polarization peaked at 24 lC=cm 2 with a coercive field of about 1.2 MV=cm. Considering the availability of conformal deposition processes and CMOS-compatibility, ferroelectric Y:HfO 2 implies high scaling potential for future, ferroelectric memories.

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Fe-based superconductors bridge a gap between MgB2 and the cuprate high temperature superconductors as they exhibit multiband character and transition temperatures up to around 55 K. Investigating Fe-based superconductors thus promises answers to fundamental questions concerning the Cooper pairing mechanism, competition between magnetic and superconducting phases, and a wide variety of electronic correlation effects. The question addressed in this review is, however, is this new class of superconductors also a promising candidate for technical applications? Superconducting film-based technologies range from high-current and high-field applications for energy production and storage to sensor development for communication and security issues and have to meet relevant needs of today’s society and that of the future. In this review we will highlight and discuss selected key issues for Fe-based superconducting thin film applications. We initially focus our discussion on the understanding of physical properties and actual problems in film fabrication based on a comparison of different observations made in the last few years. Subsequently we address the potential for technological applications according to the current situation.

The thermal atomic layer deposition of TiO2 from Cp*Ti(OMe)3 and ozone was studied in a 300 mm wafer reactor by quadrupole mass spectrometry (QMS). The deposited thin films were analyzed by X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), grazing incident X-ray diffraction, and time-of-flight secondary ion mass spectrometry (ToF-SIMS). The XRR and XPS measurements revealed that nearly stoichiometric TiO2 films were grown in a self-limiting growth mode. The growth per cycle increased from 0.22 Å at 235 °C to 0.29 Å at 330 °C. Films deposited on titanium nitride showed an anatase crystal structure, while films deposited on ruthenium crystallized in the rutile phase. The ToF-SIMS analysis indicated that the carbon contamination reduced to very low levels at a deposition temperature of 295 °C. The QMS studies revealed the release of MeOH during the precursor pulse. CO2 and H2O were released during the ozone pulse at a process pressure of 7 mbar. At a pressure of 3 × 10−3 mbar, the release of the Cp* ligand and the remaining OMe ligands during the ozone pulse could be observed. It was demonstrated that QMS studies can be used in a 300 mm reactor at very low pressures to study the process chemistry.