Impact of interface and bulk trapped charges on transistor reliability

Ghidini, G.; Langenbuch, M.; Bottini, R.; Brazzelli, D.; Ghetti, A.; Galbiati, N.; Giusto, G.; Garavaglia, A.

doi:10.1016/j.microrel.2004.11.031

Microelectronics Reliability

2005

DOI: 10.1016/j.microrel.2004.11.031

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Impact of interface and bulk trapped charges on transistor reliability

G. Ghidini¹,

M. Langenbuch²,

R. Bottini³

et al.

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Impact of interface and bulk trapped charges on transistor reliability

Cited by 2 publications

References 4 publications

Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates

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