Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films

Novel high-k dielectrics for nanoelectronics

“…With good interface properties, interfacial layer is able to improve mismatch at highk/Si interface by reducing dangling bonds and Si-O strained bonds. Hence, trap generation and localized physical damage near interface which is found to degrade gate oxide and trigger dielectric soft breakdown can be reduced [52]. Table 4.…”