Impact of high temperature reverse bias (HTRB) stress on the degradation of AlGaN/GaN HEMTs

Li, Ruguan; Wang, Yuansheng; Liao, Xin‐Hua; Peng, Lai; Huang, Yun

doi:10.1109/edssc.2014.7061108

Cited by 3 publications

(3 citation statements)

References 5 publications

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“…Under HTRB stress, a positive shift has been reported in the onresistance (RDS,ON) and threshold voltage (V TH ), but the changes do not reach a failed state [37]- [39]. In more accelerated HTRB experiments (where the drain voltage is higher than the rated voltage), the V TH instability in some early GaN HEMTs has shown up to a 50% increase, which is above the notional 20% shift failure boundary but recoverable [40].…”

Section: A High Temperature Reverse Biasmentioning

confidence: 99%

“…Determining the voltage stresses in the accelerated HTRB experiments is a challenge for GaN HEMTs because of their dynamic breakdown voltage [41]; this is in comparison to MOSFETs which have an inherently constant avalanche breakdown voltage [27], [42]. Additionally, when MOSFETs are stressed in HTRB experiments, they show an increase in gate-leakage current (IGSS), but some GaN HEMTs show a decrease in I GSS and drain-leakage currents (I DSS ) [40], [43]. These shifts in electrical parameters are all related to electron trapping and de-trapping [34], [35], [40].…”

Section: A High Temperature Reverse Biasmentioning

confidence: 99%

“…Additionally, when MOSFETs are stressed in HTRB experiments, they show an increase in gate-leakage current (IGSS), but some GaN HEMTs show a decrease in I GSS and drain-leakage currents (I DSS ) [40], [43]. These shifts in electrical parameters are all related to electron trapping and de-trapping [34], [35], [40].…”

Section: A High Temperature Reverse Biasmentioning

confidence: 99%

See 2 more Smart Citations

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Section: A High Temperature Reverse Biasmentioning

confidence: 99%

Section: A High Temperature Reverse Biasmentioning

confidence: 99%

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Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Reliability and failure analysis in power GaN-HEMTs: An overview

Meneghini

Rossetto

Santi

et al. 2017

2017 IEEE International Reliability Physics Symposium (IRPS)

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ower GaN transistors have recently demonstrated to be excellent devices for application in power electronics. The high breakdown field and the superior mobility of the 2-dimensional electron gas allow to fabricate transistors with low resistive and switching losses, that permit to increase the efficiency of switching mode power converters beyond 99 %. GaN-based transistors are currently supposed to be adopted in KW-range power converters; 650 V transistors are already available on the market, and 1200 V devices are currently under development. During operation, GaN power transistors can reach critical conditions, especially in the off-state (with a high VDS, in excess of 650 V), during hard-switching (where high current and voltage can be simultaneously present), and for high positive gate voltages (in the case of normally-off devices). This paper reports our most recent results on the gradual and catastrophic degradation of GaN-based power HEMTs. We present the results of three different case studies, on: (i) the time-dependent breakdown of power HEMTs submitted to high off-state stress; (ii) the degradation of HEMTs with p-GaN gate submitted to high gate stress; (iii) the hot electron effects in GaN-MISHEMTs submitted to high-Temperature source current stres

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